2022
DOI: 10.1039/d1ta09198k
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Ultra-low thermal conductivity in B2O3 composited SiGe bulk with enhanced thermoelectric performance at medium temperature region

Abstract: All-scale scattering contributes to the reduction of lattice thermal conductivity of SiGe-based TE materials and leads to a maximum ZT value of 1.47 at 873 K, which is best one in the temperature range of 300–900 K ever reported.

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Cited by 13 publications
(6 citation statements)
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“…2. Similar behavior of oxide decomposing was also observed in Y 2 O 3 -composited SiGe bulk [21] and B 2 O 3 -composited SiGe bulk [22]. There is also no XRD feature of Ga because it is extremely active, and most of them are vanished via evaporation in SPS process; only a small amount of precipitation exists at grain boundaries.…”
Section: Property Evaluationsupporting
confidence: 62%
See 1 more Smart Citation
“…2. Similar behavior of oxide decomposing was also observed in Y 2 O 3 -composited SiGe bulk [21] and B 2 O 3 -composited SiGe bulk [22]. There is also no XRD feature of Ga because it is extremely active, and most of them are vanished via evaporation in SPS process; only a small amount of precipitation exists at grain boundaries.…”
Section: Property Evaluationsupporting
confidence: 62%
“…The 1-dimensional dislocation [17] and grain boundary [18,19] were demonstrated to augmentedly suppress phonons with intermediate frequency [8,9]. Furthermore, the nanoinclusion, which was formed via direct compounding [20] or in-situ precipitation [21,22], acted as consolidated suppression on the phonon with low frequencies [8,23].…”
Section: Introductionmentioning
confidence: 99%
“…5 illustrates some of these systems' results. Nong et al 111 successfully introduced the B 2 O 3 second phase in SiGe by ball milling and spark plasma Fig. 5 Comparison of ZT values before and after doping of different oxides into different TE materials.…”
Section: Second-phase Precipitationmentioning
confidence: 99%
“…5 illustrates some of these systems' results. Nong et al 111 successfully introduced the B 2 O 3 second phase in SiGe by ball milling and spark plasma sintering (SPS) processes. Although the B 2 O 3 second phase boundary scattered carriers, resulting in a decrease in mobility, the increase in resistivity was acceptable.…”
Section: Interface Engineeringmentioning
confidence: 99%
“…Silicon germanium (SiGe) has been attracted attention as one of the promising thermoelectric materials due to its non-toxicity, chemical stability, and high ZT in the high temperature range [38][39][40][41][42][43][44][45][46][47][48][49][50][51][52]. However, SiGe does not have high ZT near room temperature (RT).…”
Section: Introductionmentioning
confidence: 99%