Ultra-Low Threshold Voltage OFET Using PANI Nanofibers

OFET Informatics: Observing the impact of organic transistor's design parameters on the device output performance using a machine learning algorithm

“…This promotes OFETs in sensing applications, especially low-power applications, where minimum power is required to operate. Theoretically, as reported in Benacer and Dibi 41 and experimentally in Ali et al, 18 the OFET reports ultra-low threshold voltage performance. We can attribute such low voltage to a set of factors, including but not limited to the k-index and thickness of PMMA as the gate oxide and the relatively high mobility of holes in PANI.…”

“…V ds j jagainst I ds j j for our numerical and experimental models reported in Ali et al 18 4:6 Â 10 18 . The increasing trend is associated with the increase in the carrier concentration; however, with a relatively high rate of impurities, the carrier concentration influence no longer dominates due to dopants.…”

“…This section illustrates the results extracted from the proposed ML model. the first subsection demonstrates a validation process for the suggested FEM numerical solver against our previously reported simulation and experimental results, 18,23 as well as analytical and experiential data from the literature. Second, one-dimension optimization is introduced using our randomforest model.…”

“…These five parameters are selected to fully describe the performance of the OFET in both subthreshold and active regions, as reported in the literature. 18 The SS is calculated as 41 :…”

“…These parameters are the threshold voltage, the on/off current ratio, the SS, the triode, and the saturation field‐effect device mobilities. These five parameters are selected to fully describe the performance of the OFET in both sub‐threshold and active regions, as reported in the literature 18 . The SS is calculated as 41 : $$$$ \mathrm{SS}=\frac{\partial {V}_{\mathrm{gs}}}{\partial \left(\log {I}_{\mathrm{ds}}\right)} $$$$ where $$$ {V}_{\mathrm{gs}} $$$ is the gate‐source applied voltage, and $$$ {I}_{\mathrm{ds}} $$$ is the drain current.…”