2021
DOI: 10.1088/1674-4926/42/8/082301
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Ultra-low V pp and high-modulation-depth InP-based electro–optic microring modulator

Abstract: A modulator is an essential building block in the integrated photonics, connecting the electrical with optical signals. The microring modulator gains much attention because of the small footprint, low drive voltage and high extinction ratio. An ultra-low V pp and high-modulation-depth indium phosphide-based racetrack microring modulator is demonstrated in this paper. The proposed device mainly comprises one racetrack microring, incorporating a semiconductor amplifier, and coupling with a bus … Show more

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Cited by 8 publications
(5 citation statements)
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“…There are many kinds of materials for electro-optic modulators, such as III-V semiconductor (electrical absorption materials, e.g., GaAs, InP) [ 7 ], lithium niobite [ 8 , 9 , 10 ], 2D materials [ 11 ], and organic electro-optic (OEO) materials [ 12 , 13 , 14 , 15 , 16 , 17 ]. Among them, only lithium niobate and organic EO polymer are based on the Pockels effect.…”
Section: Introductionmentioning
confidence: 99%
“…There are many kinds of materials for electro-optic modulators, such as III-V semiconductor (electrical absorption materials, e.g., GaAs, InP) [ 7 ], lithium niobite [ 8 , 9 , 10 ], 2D materials [ 11 ], and organic electro-optic (OEO) materials [ 12 , 13 , 14 , 15 , 16 , 17 ]. Among them, only lithium niobate and organic EO polymer are based on the Pockels effect.…”
Section: Introductionmentioning
confidence: 99%
“…Currently used materials for modulators include thermooptic materials [13] , III-V semiconductor (electrical absorption materials, e.g., GaAs, InP) [14] , inorganic crystal materials (lithium niobite) [15] , liquid crystals (LC) and organic electro-optic (OEO) materials. The process of refractive index change for thermo-optic materials and LCs is relatively slow and they cannot be used in high-speed EO modulation.…”
Section: Introductionmentioning
confidence: 99%
“…Lithium niobate (LiNbO 3 ) single crystals have been recognized as the most mature material for electro-optic modulators thanks to their Pockels effect [1] . Compared with modulators based on the carrier effect or microring structuressuch as direct modulation lasers [2,3] , InP modulators [4] , and silicon-based modulators [5] , broadband LiNbO 3 Mach-Zehnder (MZ) modulators with the advantages of broad bandwidth, high extinction ratio, very low chirp, and high stability [6] have been widely used in optical communication backbone transmission networks, high-performance broadband optical links, and radio-frequency (RF) photonics, and have attracted considerable attention in the last century. However, the incompatibility between the LiNbO 3 chip fabrication process and the complementary metal-oxide-semiconductor (CMOS) process has brought significant obstacles in hybrid integration research based on LiNbO 3 modulators.…”
Section: Introductionmentioning
confidence: 99%