Ultra-low voltage air-stable polyelectrolyte gated n-type organic thin film transistors

Malti, Abdellah; Gabrielsson, Erik O.; Berggren, Magnus; Crispin, Xavier

doi:10.1063/1.3626587

Cited by 25 publications

(22 citation statements)

References 17 publications

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“…The effects of the solvent and ions were not thoroughly investigated with respect to electron mobility in this work. The overall decrease of the electron mobility in OECTs is in agreement with recent work on polycationic electrolyte gated FETs with P(NDI2OD-T2), showing a decrease in the electron mobility (10 –3 –10 –2 cm 2 /(V s)) 43 − 45 compared to mobility measurements of the same polymer in OFETs (0.06–0.85 cm 2 /(V s)). 36 , 38 The strong swelling of the NDI-T2 copolymers with a large fraction of glycol chains could also increase water-induced trapping.…”

Section: Resultssupporting

confidence: 90%

The Role of the Side Chain on the Performance of N-type Conjugated Polymers in Aqueous Electrolytes

et al. 2018

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We report a design strategy that allows the preparation of solution processable n-type materials from low boiling point solvents for organic electrochemical transistors (OECTs). The polymer backbone is based on NDI-T2 copolymers where a branched alkyl side chain is gradually exchanged for a linear ethylene glycol-based side chain. A series of random copolymers was prepared with glycol side chain percentages of 0, 10, 25, 50, 75, 90, and 100 with respect to the alkyl side chains. These were characterized to study the influence of the polar side chains on interaction with aqueous electrolytes, their electrochemical redox reactions, and performance in OECTs when operated in aqueous electrolytes. We observed that glycol side chain percentages of >50% are required to achieve volumetric charging, while lower glycol chain percentages show a mixed operation with high required voltages to allow for bulk charging of the organic semiconductor. A strong dependence of the electron mobility on the fraction of glycol chains was found for copolymers based on NDI-T2, with a significant drop as alkyl side chains are replaced by glycol side chains.

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Section: Resultssupporting

confidence: 90%

The Role of the Side Chain on the Performance of N-type Conjugated Polymers in Aqueous Electrolytes

et al. 2018

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“…Few successful demonstrations of n-type organic EGTs using a unipolar polycationic electrolyte as a gate insulator have been reported, 38,39 Figure 5a. As sketched in Figure 5b, in a unipolar polycationic electrolyte, bulky polycations cannot diffuse into the semiconductor layer, so a 2D electric double layer is created at the electrolyte/semiconductor interface.…”

Section: Acs Applied Materials and Interfacesmentioning

confidence: 99%

Single Ion Conducting, Polymerized Ionic Liquid Triblock Copolymer Films: High Capacitance Electrolyte Gates for n-type Transistors

Choi

Xie

et al. 2015

ACS Appl. Mater. Interfaces

101

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There has been impressive progress in the fabrication and characterization of p-type organic electrolyte-gated transistors (EGTs). Unfortunately, despite the importance of n-type organic transistors for complementary circuits, fewer investigations have focused on developing electrolytes as gate dielectrics for n-type organic semiconductors. Here, we present a novel single ion conductor, a polymerized ionic liquid (PIL) triblock copolymer (PS-PIL-PS) composed of styrene (PS) and 1-[(2-acryloyloxy)ethyl]-3-butylimidazolium bis(trifluoromethylsulfonyl)imide (PIL), that conducts only the TFSI anion. This triblock copolymer acts as a gate dielectric to allow low-voltage n-type organic EGT operation. Impedance characterization of PS-PIL-PS reveals that there are three polarization regions: (1) dipolar relaxation, (2) ion migration, and (3) electric double layer (EDL) formation. These polarization regions are controlled by film thickness, and rapid EDL formation can be obtained in thinner polyelectrolyte films. In particular, a 500 nm-thick polyelectrolyte film exhibits a large capacitance of ∼1 μF/cm(2) at 10 kHz. Employing this single ion conducting PIL triblock copolymer as the gate insulator, we achieved low voltage operation (<1 V supply) of poly{[N,N'-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5'-(2,2'-bithiophene)} (P(NDI2OD-T2)) n-type organic EGTs (electron mobility of ∼0.008 cm(2)/(V·s) and ON/OFF current ratio of ∼2 × 10(3)) by preventing electrochemical doping. Furthermore, the recognition that the performance of n-type organic EGTs is diminished by 3D electrochemical doping suggests that it may be necessary to have a unipolar electrolyte to gate n-type organic semiconductors. Finally, we highlight that the use of PIL block copolymer electrolytes as gate insulators opens unique opportunities to explore the role of ion penetration in n-type organic EGTs by tuning the extent of electrochemical doping.

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“…More recently, Malti et al . demonstrated air‐stable, low voltage n‐type EGTs using a polycationic electrolyte gate insulator based on a mixture of poly(vinylbenzyl chloride) (PVBC) and dimethylbenzylamine (DMBA) 67. The PVBC‐DMBA polyelectrolyte has cations attached to the polymer chain, and therefore immobile cations cannot penetrate into n‐type semiconductor layer upon applying positive gate voltage.…”

Section: Practical Demonstrations Of Electrolyte‐gated Devices Andmentioning

confidence: 99%

“…In principle, implementation of inorganic semiconductors in EGTs offers opportunities to improve carrier mobilities (particularly for electrons) and increase switching frequencies 67, 76. To date, there have been a few reports of inorganic EGTs, though switching delays have not been systematically investigated.…”

Section: Practical Demonstrations Of Electrolyte‐gated Devices Andmentioning

confidence: 99%

Electrolyte‐Gated Transistors for Organic and Printed Electronics

Kim¹,

Hong²,

Xie³

et al. 2012

Advanced Materials

864

955

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Here we summarize recent progress in the development of electrolyte-gated transistors (EGTs) for organic and printed electronics. EGTs employ a high capacitance electrolyte as the gate insulator; the high capacitance increases drive current, lowers operating voltages, and enables new transistor architectures. Although the use of electrolytes in electronics is an old concept going back to the early days of the silicon transistor, new printable, fast-response polymer electrolytes are expanding the potential applications of EGTs in flexible, printed digital circuits, rollable displays, and conformal bioelectronic sensors. This report introduces the structure and operation mechanisms of EGTs and reviews key developments in electrolyte materials for use in printed electronics. The bulk of the article is devoted to electrical characterization of EGTs and emerging applications.

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Ultra-low voltage air-stable polyelectrolyte gated n-type organic thin film transistors

Cited by 25 publications

References 17 publications

The Role of the Side Chain on the Performance of N-type Conjugated Polymers in Aqueous Electrolytes

The Role of the Side Chain on the Performance of N-type Conjugated Polymers in Aqueous Electrolytes

Single Ion Conducting, Polymerized Ionic Liquid Triblock Copolymer Films: High Capacitance Electrolyte Gates for n-type Transistors

Electrolyte‐Gated Transistors for Organic and Printed Electronics

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