Ultra-low voltage GaAs/AlGaAs Mach-Zehnder intensity modulators

Shin, Jang-Uk; Dagli, N.

doi:10.1109/avfop.2008.4653173

Cited by 1 publication

(2 citation statements)

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“…The layer structure of the proposed waveguide platform is shown in figure 1. A commonly-used cladding for GaAs waveguide devices [23][24][25]28] is AlxGa1-xAs, because AlxGa1-xAs is lattice-matched to GaAs for any composition. However, Ιn0.49Ga0.51P is a promising alternative cladding material, since it suffers less from oxidation than AlxGa1-xAs and offers good quality and uniform epitaxial layers [27,29] with a lattice mismatch to GaAs as low as (Δα/α=10 -4 ) [30].…”

Section: Waveguide Materials System and Spectrometer Configurationmentioning

confidence: 99%

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Modelling of a miniature mid-IR thermo-optic spectrometer on chip based on a GaAs/In0.49Ga0.51P wav

Mourgelas

Sessions

Wilkinson

et al. 2021

Optics Communications

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Spectrometers based on integrated optical waveguides, as opposed to free space optics, provide many advantages including robustness, compactness, and low cost, combined with alignment-free and low-power operation. Interest in such a chip-based approach for integrated spectrometers is growing, but the integrated spectrometers demonstrated so far have largely been limited to operation at wavelengths up to about 5 µm due to intrinsic material absorption. In this work, we design and model an onchip thermo-optically tuneable spectrometer based on a novel waveguide material platform consisting of GaAs (core) on InGaP (cladding), with potential to operate in the wavelength range between 1 and 17 µm to fully cover the Mid-IR molecular fingerprint region. The strong thermo-optic effect exhibited by both of these materials makes the platform a very promising candidate for on-chip spectroscopy. A series of simulations were performed to predict the optical and thermal properties of the device. We show that with the proper optical and thermal optimisation of the platform and by using an interferometer with spiralled waveguides of 60 mm length, the device can effectively achieve a resolution of 10 cm -1 with a maximum temperature excursion of about 83 K and at the cost of a few tens of Watts of power.

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Section: Waveguide Materials System and Spectrometer Configurationmentioning

confidence: 99%

“…GaAs is widely used in tuneable integrated optoelectronic devices such as switches and modulators [23][24][25]. These devices utilise the electro-optic effect (EOE) exhibited by the GaAs lattice when subjected to an external electric field.…”

Section: Introductionmentioning

confidence: 99%