Ultra-scaled MOCVD MoS₂ MOSFETs with 42nm contact pitch and 250µA/µm drain current

A Bio-inspired and Low-power 2D Machine Vision with Adaptive Machine Learning and Forgetting

“…Direct-bandgap monolayer 2D materials with their superior photosensitivity, and electrostatic gate tunability are, therefore, natural choices for next generations of bio-inspired machine vision platforms. Additionally, the atomically thin body nature of 2D monolayers allow aggressive dimension scaling and hence enable high integration density as reported recently [38,50]. Moreover, some of the early criticism of 2D materials have also been successfully addressed through the realization of low contact resistance [51], high ON current [52], integration of ultra-thin and high-k gate dielectric [53], and wafer scale growth [54,55] making them a technologically viable option.…”

“…More recent developments in the area of brain-inspired machine vision also attempts to combine "sensing" with "memory" [13,23,29]. While some of these demonstrations exploit oxide-based [30] [31] [32] and organic memristors [33], perovskites [34], etc., twodimensional (2D) semiconducting monolayers are receiving significant attention owing to their superior photosensitivity [35,36], gate-tunability [37], scalability [38], and integration with memory [39][40][41][42][43][44]. Some show machine learning in hardware based on back-propagation algorithm implemented using software ANNs, whereas others preprocessed the images using software and demonstrated tasks like MNIST digit recognition or filtering using hardware ANNs .…”

Yield, variability, reliability, and stability of two-dimensional materials based solid-state electronic devices

“…lowering 7 . IMEC developed n-type FETs with~3-layer-thick MoS 2 , with 29 nm channel length and 13 nm contact length, and achieved an on-state current of~250 μA/μm and an excellent SS = 80 m V/decade using 50 nm SiO 2 and 4 nm HfO 2 as backgate dielectric, respectively 8 . Ref.…”

“…Ref. 8 presents a variability study of the SS, threshold voltage (V T ) and contact resistance (R C ) for hundreds of devices, which allowed the authors to design a detailed strategy for future optimizations. Similar studies were carried earlier in academia 9 but not in such small devices.…”

“…In ref. 8 , 60°twin boundaries were identified as the main type of dislocation present in the MoS 2 channels grown by chemical vapour deposition (CVD), but the impact of individual dislocations and bilayer islands on electrical performance of individual nanoscale devices could not yet be established. However, the large amount of data collected allowed the authors to discern that the standard deviation of V T increases with narrower W but not with shorter L, suggesting that the Schottky contacts are responsible for V T variability.…”