Ultra-sensitive NO&lt;inf&gt;2&lt;/inf&gt; detection with AlGaN/GaN 2DEG channels for air quality monitoring

Offermans, P.; Vitushinsky, R.; Crego‐Calama, Mercedes; Brongersma, Sywert

doi:10.1109/icsens.2012.6411370

Cited by 3 publications

(3 citation statements)

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“…AlGaN layers with 30% Al concentration contain 5-10 times higher channel sheet densities compared with GaAs or InP HEMTs. By functionalizing the gate area of an HEMT sensor for sensing materials, the AlGaN/GaN sensors have been demonstrated for H 2 [21], CO [22]- [24], NO [25], [26], NO 2 [26]- [28], NH 3 [25], [29], [30], CH 4 [31], H 2 S [32], [33], and C 2 H 2 [34]. So far, very few results of acetone detection with AlGaN/GaN devices have been reported [35].…”

Section: Introductionmentioning

confidence: 99%

Characterization of an Acetone Detector Based on a Suspended WO₃-Gate AlGaN/GaN HEMT Integrated With Microheater

Sun¹,

Sokolovskij²,

Iervolino³

et al. 2019

IEEE Trans. Electron Devices

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A suspended AlGaN/GaN high electron mobility transistor (HEMT) sensor with a tungsten trioxide (WO 3 ) nanofilm modified gate was microfabricated and characterized for ppm-level acetone gas detection. The sensor featured a suspended circular membrane structure and an integrated microheater to select the optimum working temperature. High working temperature (300 • C) increased the sensitivity to up to 25.7% and drain current change I DS to 0.31 mA for 1000-ppm acetone in dry air. The transient characteristics of the sensor exhibited stable operation and good repeatability at different temperatures. For 1000-ppm acetone concentration, the measured response and recovery times reduced from 148 and 656 to 48 and 320 s as the temperature increased from 210 • C to 300 • C. The sensitivity to 1000-ppm acetone gas was significantly greater than the sensitivity to ethanol, ammonia, and CO gases, showing low cross-sensitivity. These results demonstrate a promising step toward the realization of an acetone sensor based on the suspended AlGaN/GaN HEMTs.

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Section: Introductionmentioning

confidence: 99%

Characterization of an Acetone Detector Based on a Suspended WO₃-Gate AlGaN/GaN HEMT Integrated With Microheater

Sun¹,

Sokolovskij²,

Iervolino³

et al. 2019

IEEE Trans. Electron Devices

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“…A locally thinned (20-30 nm) AlGaN barrier recess has also been applied for enhancement mode HEMTs [37], Au-free ohmic contact [38], CMOS compatible ohmic resistance reduction [39] and to improve the sensitivity of HEMT-based sensors [21], [40]- [42]. The AlGaN/GaN recess would be commonly done by reactive ion etching (RIE) using Cl 2 /BCl 3 plasma with low power or thermal oxidation at 650 • C coupled with KOH oxide etching at 70 • C [43].However, the use of dry RIE etching often exhibits difficulties of depth control, non-uniformities, etching residues and lattice damage due to ion bombardment.…”

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confidence: 99%

“…A gate recess of AlGaN/GaN heterostructure sensor using ICP-RIE dry etching with low-ppb level sensitivity was demonstrated by Peter Offermans et al [21], [22], [42], [46]. However, the current change is nA level and response time is about 30 mins for 100 ppb NO 2 /N 2 , which is not easy for practical application but offer nevertheless indisputably high potential [21], [42]. The authors later developed a gate recess AlGaN/GaN heterostructure sensor integrated a micro-heater.…”

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confidence: 99%

Enhanced Sensitivity Pt/AlGaN/GaN Heterostructure NO₂ Sensor Using a Two-Step Gate Recess Technique

et al. 2021

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Based on our proposed precision two-step gate recess technique, a suspended gate-recessed Pt/AlGaN/GaN heterostructure gas sensor integrated with a micro-heater is fabricated and characterized. The controllable two-step gate recess etching method, which includes O 2 plasma oxidation of nitride and wet etching, improves gas sensing performance. The sensitivity and current change of the AlGaN/GaN heterostructure to 1-200 ppm NO 2 /air are increased up to about 20 and 12 times compared to conventional gate device, respectively. The response time is also reduced to only about 25 % of value for conventional device. The sensor has a suspended circular membrane structure and an integrated micro-hotplate for adjusting the optimum working temperature. The sensitivity (response time) increases from 0.75 % (1250 s) to 3.5 % (75 s) toward 40 ppm NO 2 /air when temperature increase from 60 • C to 300 • C. The repeatability and cross-sensitivity of the sensor are also demonstrated. These results support the practicability of a high accuracy and fast response gas sensor based on the suspended gate recessed AlGaN/GaN heterostructure with an integrated micro-heater. Index Terms-AlGaN/GaN, gate recess, gas sensor, NO 2 . I. INTRODUCTION R ECENTLY, there have been growing concerns about environment pollution, such as photochemical smog and acid rain, was caused by the growing nitrogen dioxide (NO 2 ) emission mainly from combustion of automotive exhaust [1], [2], industrial processes [3]. Especially, the monitoring of

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Graded Al Component AlGaN Heterojunction Nanowire Array Photocathode

Pi,

Liu,

Zhangyang

et al. 2024

JOM

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Ultra-sensitive NO<inf>2</inf> detection with AlGaN/GaN 2DEG channels for air quality monitoring

Cited by 3 publications

References 4 publications

Characterization of an Acetone Detector Based on a Suspended WO₃-Gate AlGaN/GaN HEMT Integrated With Microheater

Characterization of an Acetone Detector Based on a Suspended WO₃-Gate AlGaN/GaN HEMT Integrated With Microheater

Enhanced Sensitivity Pt/AlGaN/GaN Heterostructure NO₂ Sensor Using a Two-Step Gate Recess Technique

Graded Al Component AlGaN Heterojunction Nanowire Array Photocathode

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Ultra-sensitive NO<inf>2</inf> detection with AlGaN/GaN 2DEG channels for air quality monitoring

Cited by 3 publications

References 4 publications

Characterization of an Acetone Detector Based on a Suspended WO3-Gate AlGaN/GaN HEMT Integrated With Microheater

Characterization of an Acetone Detector Based on a Suspended WO3-Gate AlGaN/GaN HEMT Integrated With Microheater

Enhanced Sensitivity Pt/AlGaN/GaN Heterostructure NO₂ Sensor Using a Two-Step Gate Recess Technique

Graded Al Component AlGaN Heterojunction Nanowire Array Photocathode

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Characterization of an Acetone Detector Based on a Suspended WO₃-Gate AlGaN/GaN HEMT Integrated With Microheater

Characterization of an Acetone Detector Based on a Suspended WO₃-Gate AlGaN/GaN HEMT Integrated With Microheater