Ultra-shallow high-concentration boron profiles for CMOS processing

Carey, P.G.; Sigmon, T. W.; Press, Raven; Fahlen, T. S.

doi:10.1109/edl.1985.26129

Cited by 96 publications

(12 citation statements)

References 7 publications

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“…Each sample was irradiated with ten spatially homogenized laser pulses at an energy of 0.35 J/cm . The process relies on the pulsed excimer laser radiation to rapidly heat and melt the silicon surface [14]. Talwar demonstrated that the laser processing does not degrade the gate oxide integrity [15].…”

Section: Methodsmentioning

confidence: 99%

Differential thermal budget in laser processing: application to formation of titanium silicide

Verma

Talwar²,

Bravman

2000

IEEE Electron Device Lett.

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One of the crucial issues that must be faced when using titanium silicide in advanced IC structures is the difficulty encountered in phase transforming the silicide from the its high to its low resistivity phase. As gate dimensions are reduced there is a reduction in the number of nucleation sites available to initiate transformation on laterally and vertically confined films. In this letter, we demonstrate a novel technique, using a pulsed excimer laser, to produce thicker silicides over the gate than over the source and drain regions. This is difficult to achieve using conventional thermal processing. The increased thickness of silicide over the gate region should assist in alleviating the phase transformation problem.

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Section: Methodsmentioning

confidence: 99%

Differential thermal budget in laser processing: application to formation of titanium silicide

Verma

Talwar²,

Bravman

2000

IEEE Electron Device Lett.

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“…[10][11][12][13][14] Typically, implants have been activated, but defects and changes in surface stoichiometry are reported. [10][11][12] Recent reports 13,14 using excimer laser activation of ion implanted dopants is promising, although the potential to incorporate dopants from the gas phase without ion implantation, as has been demonstrated in silicon, [15][16][17] has not been reported to date.…”

Section: ͓S0003-6951͑99͒04022-x͔mentioning

confidence: 99%

In situ boron incorporation and activation in silicon carbide using excimer laser recrystallization

Russell

Ramirez

1999

Applied Physics Letters

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In situ incorporation and activation of boron into silicon carbide is demonstrated using excimer laser recrystallization in a boron trifluoride ambient. Rutherford backscattering spectroscopy and x-ray analysis demonstrate that there is no crystalline damage during recrystallization at laser fluences below ∼1.4 J/cm2. Point-contact current–voltage measurements confirm dopant activation, and the formation of shallow (∼90 nm) pn junctions in silicon carbide. This technique may be applied to the fabrication of shallow junctions and low resistance contacts in silicon carbide power devices without ion implantation and furnace annealing.

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“…Carey et al [6] reported the Gas Immersion Laser Doping (GILD) process where Si wafer is irradiated by laser light in B 2 H 6 gas ambient. Sameshima et al [7] reported the Laser-Induced Melting of Predeposited Impurity Doping (LIMPID) technique, where a Si wafer with deposited dopant film is irradiated by a pulsed laser light.…”

Section: Introductionmentioning

confidence: 99%

In-Situ Crystallization and Doping of a-Si film by means of Spin-On-Glass

1994

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A novel technique has been proposed for selective and in -situ excimer-laser crystallization and doping to thin poly-Si films. Dopant atoms are supplied, during the Si laser crystallization process, to the Si film on glass from the doped SOG (spin-on-glass) film coated on the top. Conductivity of the processed film was increased to more than 10S/cm from about 10-8 s/cm of the starting film. This technique has been applied to the bottom gate amorphous-Si TFTs with self-aligned poly-Si source and drain. The electron field-effect mobility was 1.0cm 2 /Vs and the on/off current ratio was more than 106. No parasitic effects were observed, and the hole conduction was effectively suppressed. This in -situ crystallization and doping technique can also be applied to the top gate a-Si TFT process.

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Ultra-shallow high-concentration boron profiles for CMOS processing

Cited by 96 publications

References 7 publications

Differential thermal budget in laser processing: application to formation of titanium silicide

Differential thermal budget in laser processing: application to formation of titanium silicide

In situ boron incorporation and activation in silicon carbide using excimer laser recrystallization

In-Situ Crystallization and Doping of a-Si film by means of Spin-On-Glass

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