Ultra-shallow junctions produced by plasma doping and flash lamp annealing

Skorupa, W.; Yankov, R.A.; Anwand, W.; Voelskow, M.; Gebel, T.; Downey, Daniel F.; Arevalo, E.

doi:10.1016/j.mseb.2004.07.063

Cited by 32 publications

(13 citation statements)

References 11 publications

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“…12 This again, shows the importance of the layer structure of the samples under investigation. Therefore, we calculate the amount of reflected and transmitted energy as well as the energy deposited within the top silicon layer in the cases of SOI and sSOI.…”

Section: Reflection and Absorption In Soi/ssoimentioning

confidence: 85%

“…In order to increase the maximum temperature and to minimize the thermally induced stress of the SOI/sSOI wafers, the halogen lamps were used to preheat the samples to a temperature of 650°C. The chosen pulse duration and preheating temperature ensure optimum conditions in terms of dopant diffusion and activation as shown by Skorupa et al 12 for bulk silicon. The whole process of preheating and FLA took place in an inert ambient of argon.…”

Section: Sample Preparationmentioning

confidence: 99%

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Boron activation and diffusion in silicon and strained silicon-on-insulator by rapid thermal and flash lamp annealings

Lanzerath

Buca

Trinkaus

et al. 2008

Journal of Applied Physics

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We present experimental results on the activation and diffusion behaviors of boron in silicon-on-insulator and strained silicon-on-insulator using standard rapid thermal processing treatments as well as flash lamp annealing. After boron implantation at different doses and at a low energy of 1 keV, samples were annealed to activate the dopants, and secondary ion mass spectrometry and Hall measurements were carried out to determine boron diffusion and the amount of activated dopants, respectively. In contrast to rapid thermal annealing, flash lamp annealing enables the activation without significant diffusion of dopants. In addition, we investigated the effect of coating the samples with antireflection layers to increase the absorbed energy during flash annealing. As a result, the activation was increased significantly to values comparable with the activation obtained with standard annealing. Furthermore, the relation between the observed boron diffusion and activation as a function of the implantation and annealing parameters is discussed in terms of the kinetics of the defects involved in these processes.

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Section: Reflection and Absorption In Soi/ssoimentioning

confidence: 85%

Section: Sample Preparationmentioning

confidence: 99%

Boron activation and diffusion in silicon and strained silicon-on-insulator by rapid thermal and flash lamp annealings

Lanzerath

Buca

Trinkaus

et al. 2008

Journal of Applied Physics

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“…Indeed, the semiconductor industry anneals heavily boron-doped silicon in a matter of milliseconds to achieve this substitutional effect. 38 For this reason, even with the relatively fast acquisition rate afforded by synchrotron radiation, the active boron substitution is difficult to observe as the equilibrium state is rapidly attained. Cooling the material at the relatively slow rate of 100°C/min also has the effect of re-precipitating the excess boron greater than the solubility limit back out of the silicon as either silicon boride or boron clusters.…”

Section: Strain State Of Silicon As a Function Of Temperaturementioning

confidence: 99%

In situ characterization of residual stress evolution during heat treatment of SiC/SiC ceramic matrix composites using high‐energy X‐ray diffraction

et al. 2020

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Multiple studies have investigated the residual stress state of melt-infiltrated SiC/SiC ceramic matrix composites (CMCs) through the utilization of Raman spectroscopy, 1-5 the common intersection point (CIP) method, 6-8 and surface X-ray diffraction (XRD) techniques. 9-11 Raman spectroscopy is predominately a surface technique, characterizing microstresses within tens of micrometers of the free surfaces, and thus Raman spectroscopy cannot capture volumetric stresses. The CIP method investigates large specimens and determines a single volume-averaged residual stress data point per specimen, consuming relatively

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“…FLA is a very rapid heat treatment where a bank of capacitors discharges a large amount of energy into Xe flash lamps [37,[132][133][134]. The capacitors are discharged in a matter of milliseconds inducing the flash lamps to emit a light pulse with a high energy density peaking in intensity around 500 nm [135].…”

Section: Flash Lamp Annealingmentioning

confidence: 99%

Formation of shallow boron emitters in crystalline silicon using flash lamp annealing: Role of excess silicon interstitials

Riise

Schumann

Azarov

et al. 2015

Applied Physics Letters

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This thesis explores various processing and materials aspects of an oxide solar cell. A tandem structure consisting of a Silicon (Si) bottom cell, and a Cuprous Oxide (Cu 2 O)/Zinc Oxide (ZnO) top cell is suggested, and several materials challenges relevant for the design is addressed. Using Flash Lamp Annealing, shallow p-type emitters are produced in Si by indiffusion of Boron (B) from a surface source. The B diffusion is shown to be enhanced by a transient of Si interstitials originating from the surface coating. The n ++-side of a Si tunneling junction is realized by sputter depositing highly Phosphorus (P) doped Si thin films on quartz. The P activation and thin film conductivity are highest after prolonged, high temperature annealing, and thin film roughness is significantly reduced after a Reactive Ion Etch treatment of the quartz substrates. A rectifying Cu 2 O/Si heterojunction is demonstrated, and most of its depletion layer is located in Si showing that the acceptor concentration in the sputtered Cu 2 O is significantly higher than 1.1×10 17 cm −3. Epitaxial growth of Cu 2 O is realized on single crystal ZnO, and XRD measurements reveal that the Cu 2 O grows in two separate [111]-oriented domains which are rotated 180 • relative to each other. Further, a thin, detrimental layer of CuO is evidenced by TEM at the interface between the sputtered Cu 2 O and the ZnO single crystal. Homoepitaxial sputter growth of ZnO is investigated in some detail, and the growth is found to depend on sputter target power density, substrate polarity, and growth ambient. Specifically, c-axis growth is promoted when growing on the Zn-face of ZnO, while slower, in-plane growth is promoted during O-face growth and during growth in a Nitrogen ambient. Treating sputter grown Cu 2 O thin films by Rapid Thermal Annealing is demonstrated by XRD, PL and Hall effect measurements to be highly beneficial for the thin film structural quality. Finally, two band gap defects in Cu 2 O are revealed using Temperature Dependent Hall effect measurements, and the defect ionization energy values are found to be dependent on sample strain.

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Ultra-shallow junctions produced by plasma doping and flash lamp annealing

Cited by 32 publications

References 11 publications

Boron activation and diffusion in silicon and strained silicon-on-insulator by rapid thermal and flash lamp annealings

Boron activation and diffusion in silicon and strained silicon-on-insulator by rapid thermal and flash lamp annealings

In situ characterization of residual stress evolution during heat treatment of SiC/SiC ceramic matrix composites using high‐energy X‐ray diffraction

Formation of shallow boron emitters in crystalline silicon using flash lamp annealing: Role of excess silicon interstitials

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