“…Furthermore, the introduction of germanium and IV-IV alloys in the CMOS technology, for microelectronics or optoelectronics, reveals that germanium doping is facing specific difficulties, such as fast dopant diffusion induced by thermal annealing (specially in the case of phosphorus), and low active dopant concentrations due to dopant solid-solubility limitation [1][2][3]. In this context, laser doping techniques appear as attractive solutions to realize thermal annealing after dopant implantation (laser thermal processing (LTP) or annealing (LTA) [4][5][6][7][8]), or as an in situ doping process (gas immersion laser doping (GILD) [9][10][11][12][13]). Most of the LTP and GILD published results concern silicon, while only few publications deal with LTP experiments on germanium [6][7][8].…”