2002
DOI: 10.1016/s0169-4332(01)00623-7
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Ultra-shallow, super-doped and box-like junctions realized by laser-induced doping

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Cited by 32 publications
(19 citation statements)
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“…This typical evolution results from the incorporation of dopants at each laser pulse, while the incorporated dopant dose and melted depth increase with the laser energy. The details of this process have been reported previously [12,13,16] It must be noticed that sheet resistances of nearly 10 Ω/□ are easily reached. We will come back to B doping of Si by GILD in the last section.…”
Section: Methodsmentioning
confidence: 90%
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“…This typical evolution results from the incorporation of dopants at each laser pulse, while the incorporated dopant dose and melted depth increase with the laser energy. The details of this process have been reported previously [12,13,16] It must be noticed that sheet resistances of nearly 10 Ω/□ are easily reached. We will come back to B doping of Si by GILD in the last section.…”
Section: Methodsmentioning
confidence: 90%
“…In a previous work, boron doping of Si by GILD has shown excellent performances in terms of junction depth (down to ≈10 nm) , box-like and abrupt profiles (down to 2.5 nm/decade), dopant concentration (up to ≈3 × 10 21 cm − 3 ) and sheet resistance (down to 10 Ω/□) [12][13].…”
Section: Contents Lists Available At Sciencedirectmentioning
confidence: 95%
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“…Ge atoms chemisorbed on the sample surface are able to diffuse into the melted layer and form a SiGe layer over the melted depth. Because the entire process duration is very short (< 1 µs), and atom diffusion is enhanced by orders of magnitude as melting occurs [8], Si and Ge diffusion is highly effective in the melted material but remains negligible in the solid material. Solidification occurs through a liquid phase epitaxy process with a high solid/liquid interface velocity (typically ≈1 m/s) which quenches atom segregation, improves their solubility and leads to a SiGe epilayer over the underlying crystalline silicon.…”
Section: Methodsmentioning
confidence: 99%
“…La durée de fusion, mesurée par réflectivité transitoire, peut être corrélée à la profondeur fondue pour chaque impulsion laser. 100 données des expériences de GILD * E s ~fit des données deg Cette corrélation est plus facilement démontrée dans le cas du GILD car la concentration en bore augmente de façon continue avec le nombre de tirs laser [13]. Cette évaluation est basée sur la modification de l'indice de réfraction de la couche dopée, due à l'incorporation et à l'activation du bore, selon la théorie de Drude [14].…”
Section: Determination De L'epaisseur Dopee a Partir De La Reflectiviunclassified