Ultra-smooth BaTiO3 surface morphology using chemical mechanical polishing technique for high-k metal-insulator-metal capacitors

Sung, Ho-Kun; Wang, C.; Kim, N.Y.

doi:10.1016/j.mssp.2015.07.016

Cited by 15 publications

(4 citation statements)

References 18 publications

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“…According to the Figure 15(a) and (b), the Si 2p spectrum clearly displays peaks of three curves: 100.3, 100.9, and 102.1 eV, which corresponding to Si-O bonding, Si-C-O bonding and Si-C bonding, respectively. 30,31 The peak value and peak area of Si-O bonding and Si-C-O bonding are significantly larger on 4H-SiC surface with PCMP than static oxidation. It indicates that more Si-C bonding is oxidized to form Si-C-O bonding and Si-O bonding under the promotion of mechanical action.…”

Section: Resultsmentioning

confidence: 98%

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Mechanism of chemical and mechanical mutual promotion in photocatalysis-assisted chemical mechanical polishing for single-crystal SiC

Yuan

Tang

et al. 2022

Proceedings of the Institution of Mechanical Engineers, Part C:

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Single-crystal SiC has become the third-generation semiconductor material with the most development potential due to its many outstanding physical and chemical properties, but excellent surface quality is the prerequisite for its application. Therefore, atomic mechanism of chemical and mechanical mutual promotion in hydroxyl radical ·OH aqueous was researched through reactive molecular dynamics simulation for obtaining nano-smoothed surface with photocatalysis-assisted chemical mechanical polishing (PCMP). The behavior of nanoparticles promoting chemical reaction during the nanofinishing process was studied vias a single abrasive sliding on the surface of SiC. A combination method of mechanical action and chemical action was adopted to compare effect of material oxidation and material removal. Si/C atoms are mainly fractured or escaped in the forms of SiO, CO, chain, SiO2, and CO2, and more residual oxidation products were observed on the substrate. Furthermore, XPS and nanoindentation results also support the mechanism of chemical and mechanical mutual promotion in PCMP through the detection of the oxidized products and surface hardness. This process activated and removed the SiC materials and generated a smooth and non-damaged surface (Ra 0.269 nm and Rmax 0.807 nm). The research results may reveal the removal mechanism of Si/C atoms, and provide new theoretical and technical support for the ultra-precision machining of single crystal sapphire, silicon nitride and diamond etc.

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Section: Resultsmentioning

confidence: 98%

“…(a) and (b), the Si 2p spectrum clearly displays peaks of three curves: 100.3, 100.9, and 102.1 eV, which corresponding to Si-O bonding, Si-C-O bonding and Si-C bonding, respectively 30,31. The peakvalue and peak area of Si-O bonding and Si-C-O bonding are significantly larger on 4H-SiC surface with PCMP than static oxidation.…”

mentioning

confidence: 95%

Mechanism of chemical and mechanical mutual promotion in photocatalysis-assisted chemical mechanical polishing for single-crystal SiC

Yuan

Tang

et al. 2022

Proceedings of the Institution of Mechanical Engineers, Part C:

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“…It was observed that the force F x during the simulation was greater in •OH aqueous solution. Because friction force (force F x ) is directly proportional to the number of atoms forming bonds [40]. Moreover, it also explains that the presence of •OH on the SiC surface is helpful to the removal of Si and C atoms.…”

Section: The Removal Form Of Si/c Atomsmentioning

confidence: 99%

Atomistic removal mechanisms of nano polishing single-crystal SiC in hydroxyl free radical aqueous solution

Yuan,

Tang,

Wang

et al. 2023

Phys. Scr.

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Single-crystal SiC has been widely applied for electronic devices. Photocatalysis assisted chemical mechanical polishing (PCMP) is an efficient global flattening technology for finishing SiC, but the atomic level removal mechanism is still under discussion. In this paper, the atomic behavior of removal with hydroxyl free radical (∙OH) aqueous solution was investigated using the ReaxFF molecular dynamics (MD) simulation. The theoretical analysis shows that ∙OH oxidation of SiC can occur spontaneously, and the mechanical behavior would be able to increase the potential energy and reduce the reaction barrier the reactants. The simulation results show that with only chemical oxidation occurs, the SiC surface adsorbed O, H or -OH to produce Si-O*H2, Si-OH2, Si-OH, Si-H2O, Si-H*O*-H2O, Si-H2O*, Si-O*H* and Si-H, etc., no Si atoms were observed to detach from the SiC substrate. Nevertheless, if the mechanical action was applied, some Si and C atoms break off the substrate by forming SiO, SiO2, CO, CO2 or chain, and the other Si or C atoms were detached by the adsorption on the abrasive. In addition, no atoms break away from the substrate in H2O solution. The force Fx in H2O solution is less than that in ∙OH aqueous solution because of the lubrication of H2O solution. Furthermore, it is found that the mechanical action applied, the more -H and -O adsorbed on the SiC surface result in the more Si and C atoms are removed. The experimental results show that SiC wafer could be oxidized by ∙OH under the mechanical action of diamond abrasive particles. This study reveals that the removal of Si and C atoms from the substrate is the result of the combined action of chemical oxidation and mechanical sliding, which is helpful to explain the dynamic process of the oxidation and removal of Si and C atoms on the atomic level in the SiC PCMP. Furthermore, it provides a valuable method reveal the material removal mechanism.

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“…The mechanical action of the probe causes the C-C bonds to break, and the carbon atoms in the fracture area contain dangling bonds that adsorb into bonds with atoms in the solution. The tangential force F x is proportional to the number of interface bonds [38,39], which will be further discussed in the following analysis process.…”

Section: Comparison Of Mechanical Behavior and Damage In •Oh And Pure...mentioning

confidence: 99%

Cooperative roles of mechanical behavior and chemical reactions in mechanical chemical nano cutting of graphene assisted by ·OH radicals: quantum mechanics and reaction molecular dynamics simulations

Tang,

Yuan,

et al. 2023

Phys. Scr.

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In order to achieve precise and controllable cutting of graphene and to meet the high quality of cutting edges required in electronics. In this study, the tangential force, radial distribution function, dangling bonds, oxidation bonds, and density functional theory were used to investigate the mechanical behaviour, cutting damage, microscopic mechanism of chemical reactions, and feasibility of elementary reactions in mechanical chemical nano cutting graphene with different solution environments. The results show that the difference in the number of broken and interfacial bonds, dominated by the variability of chemical interactions, leads to a difference in cutting forces, and that there is a negative correlation between the number of C–C bonds and the number of C–O bonds. In the pure H2O solution environment, the unsaturated C atoms in the carbon chain undergo adsorption reactions with the solution atoms, which shows the carbon chain structures such as –C#–H2O, –C#–H, –C#–O and –C#–O. In the ·OH solution environment, the edge structure atoms obtained by mechanical chemical nano cutting of graphene are more structured, more C–O interfacial bonds are formed, and the C atoms are able to detach from the graphene in the form of C*O2. The energy barriers in the elementary reactions need to be overcome by the mechanical action of the probe, and the cooperative roles of mechanical behaviour and chemical reaction enables oxidation and smooth cutting of atoms at the slit edges of graphene.

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Ultra-smooth BaTiO3 surface morphology using chemical mechanical polishing technique for high-k metal-insulator-metal capacitors

Cited by 15 publications

References 18 publications

Mechanism of chemical and mechanical mutual promotion in photocatalysis-assisted chemical mechanical polishing for single-crystal SiC

Mechanism of chemical and mechanical mutual promotion in photocatalysis-assisted chemical mechanical polishing for single-crystal SiC

Atomistic removal mechanisms of nano polishing single-crystal SiC in hydroxyl free radical aqueous solution

Cooperative roles of mechanical behavior and chemical reactions in mechanical chemical nano cutting of graphene assisted by ·OH radicals: quantum mechanics and reaction molecular dynamics simulations

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