Ultra-stable and low-divergence high-power antimonide light emitters with on-chip mode filter

Abstract

Antimonide semiconductor laser diodes with high brightness are ideal light sources for a variety of applications. However, the traditional structure of broad-area (BA) lasers with high-power output is normally accompanied by a multi-lobed far field profile and large lateral divergence. In this paper, we put up an on-chip microstructure for mode filtering. The excellent mode control capability is doubly confirmed by optical field simulations and complete device measurements. The optimized device shows an enhanced continuous-wave output power in exceeding of 1.3 W at room temperature, along with a reduced threshold current and increased peak power conversion efficiency. Moreover, it exhibits an ultra-stable lateral far field with a 45.6% reduction in divergence and a notable 75.5% improvement in current dependence compared with conventional BA diode lasers. The minimum divergence is as low as 5.64° for full width at half maximum definition.