“…5,12,[14][15][16]18,20,21,27,42,86,89,90,137,143,144 In the DBG process, die singulation occurs during grinding instead of dicing. In the DBG process flow for ultrathin dies, 14,42,84,89,143 first a wafer is partially diced from its frontside to the desired final die thickness by blade dicing, laser scribing, wet etching, plasma etching, or a combination of these ( Figure 40). Second, the wafer is transferred on to a temporary rigid carrier with its frontside attached to the carrier.…”