2004
DOI: 10.1016/j.tsf.2003.11.303
|View full text |Cite
|
Sign up to set email alerts
|

Ultra thin tungsten nitride film growth on dielectric surfaces

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1

Citation Types

0
13
0

Year Published

2011
2011
2021
2021

Publication Types

Select...
8
1

Relationship

0
9

Authors

Journals

citations
Cited by 14 publications
(13 citation statements)
references
References 11 publications
0
13
0
Order By: Relevance
“…Similar to the titanium nitride, ammonia reduction process is utilized to produce tungsten nitride with the precursor of tungsten oxides and sulfides at a high temperature 600–900 °C. Additionally, CVD methods such as low pressure CVD, plasma enhanced CVD, and ALD have also been applied for the synthesis of tungsten nitride films and in the most cases, the stable β‐W 2 N phase is formed . In order to improve the surface area of tungsten nitride, Chakrapani et al fabricated tungsten nitride nanowires on FTO substrate by a specially designed hot wire CVD method.…”
Section: Synthesis Methods For Transition Metal Carbides and Nitridesmentioning
confidence: 99%
“…Similar to the titanium nitride, ammonia reduction process is utilized to produce tungsten nitride with the precursor of tungsten oxides and sulfides at a high temperature 600–900 °C. Additionally, CVD methods such as low pressure CVD, plasma enhanced CVD, and ALD have also been applied for the synthesis of tungsten nitride films and in the most cases, the stable β‐W 2 N phase is formed . In order to improve the surface area of tungsten nitride, Chakrapani et al fabricated tungsten nitride nanowires on FTO substrate by a specially designed hot wire CVD method.…”
Section: Synthesis Methods For Transition Metal Carbides and Nitridesmentioning
confidence: 99%
“…While the ponderomotive energy of trapped electrons should scale as F 2 loc , we observe saturation in the peak electron energy at ∼ 400 eV. While the electron energy loss spectra of tungsten nitride shows no excitations in the 100-400 eV energy range, an onset of strong electron absorption above 400 eV coincides with the nitrogen 1s excitation [32][33][34]. We therefore assign the low energy distribution to electrons inelastically scattered within the nitride, delaying emission and accelerated by the Sommerfeld resonance of the tip.…”
mentioning
confidence: 65%
“…15,16 In view of the ongoing development from microelectronics to nanoelectronics, the realization of homogeneous and high-purity nitride nanomaterials has seen an increase in attention in the last years. 17 Furthermore, nanosized WN x is of interest in the eld of catalysis, since the addition of N atoms to the metal structure serves as chemical functionalization, thereby giving the metal electronic and catalytic properties of noble metals. [18][19][20][21] WN x can replace costly Pt-based catalysts in various redoxreactions, [22][23][24] oxygen-reduction reactions and hydrogen evolution reactions in fuel cells.…”
Section: Introductionmentioning
confidence: 99%