Ultra-violet absorption band-systems of SnSe and SnTe

Vago, E E; Barrow, R. F.

doi:10.1088/0959-5309/58/6/310

Cited by 16 publications

(5 citation statements)

References 5 publications

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“…Taking the 95% confidence level uncertainty in each enthalpy as due entirely to that in either A or C, an underestimate, one gets HPbT~ = 1,991 -+ 8,250 (J/tool) for 13 m/o SnTe Hsnwe : 19,346 _+ 33,825 Hpbwe ---4,326 _+ 14,815 (J/tool) for 20 m/o SnTe HS~T~ = 38,595 -+ 33,672 [54] Thus with the precision attained in fitting the partial optical absorbance, the temperature range of the experiments is too small to define the relative partial molar enthalpies closely and, except for the last one, these are zero within experimental error. A similar situatioa holds for the relative partial molar entropies.…”

Section: Discussionmentioning

confidence: 99%

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Partial Pressures and Thermodynamic Properties of PbTe ‐ SnTe Solid and Liquid Solutions with 13, 20, and 100 Mole Percent SnTe

Huang

Brebrick

1988

J. Electrochem. Soc.

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The partial pressures of Te2 , normalPbTe , and normalSnTe are determined for the solid solutions false(Pb1−xSnx)1−yTeyfalse(normalcfalse) with x=0.13,0.20,normaland 1.0 and for y values corresponding to Pb‐Sn saturation, to Te saturation, and to compositions within the homogeneity range, as well as for the liquids forming from these solids. The partial pressures are extracted from measurements of the optical absorbance of the coexisting vapor phase between 230 and 700 nm. A number of thermodynamic and phase diagram data are obtained. The enthalpy of fusion of congruently melting, 50.4 a/o Te normalSnTe , is 45.7±1.2 normalkJ/normalmol . Combining our data with published data, the high temperature Gibbs energy of formation is obtained for compositions between 50.1 and 50.9 a/o Te and for all of these, normalΔHf,2980=−58.7±0.3 normalkJ/normalmol and normalΔSf,2980=4.13±0.34J/normalmol‐K . Comparing our data with 77 K Hall measurements, the native acceptors are doubly ionized for x=0.13 normaland 0.20 . The Gibbs energy of formation of the solid solutions from the binary compounds is close to, but distinct from, the value for the ideal mixing of normalPbTe and normalSnTe . In contrast the enthalpy and excess entropy of mixing are not closely defined and their 95% confidence level uncertainties include the value zero. The partial pressure of Te2 for the 50 a/o Te melts is independent of the x‐value.

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Section: Discussionmentioning

confidence: 99%

“…[18] we rewrite Eq. [19] and [20] for each wavelength and sample temperature. We define Da as the optical absorbance at the jth sample temperature for the ith wavelength and T~j as the corresponding sample temperature.…”

Section: Sn-te Binary Systemmentioning

confidence: 99%

Partial Pressures and Thermodynamic Properties of PbTe ‐ SnTe Solid and Liquid Solutions with 13, 20, and 100 Mole Percent SnTe

Huang

Brebrick

1988

J. Electrochem. Soc.

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“…Bulk SnTe is a well studied material that nevertheless continues to provide new Physical phenomena. Studies exist of its optical and electronic properties [5][6][7][8][9] that include magnetoresistance [10][11][12][13] , the influence of temperature on electron transport 14 , the evolution of theoretical [15][16][17][18] and experimental [19][20][21] electronic band structure methodologies, the relation of carrier concentration and anomalous resistivity with the rhombic to rocksalt phase transition [22][23][24] , and superconductivity 25,26 .…”

Section: Introductionmentioning

confidence: 99%

From an atomic layer to the bulk: Low-temperature atomistic structure and ferroelectric and electronic properties of SnTe films

et al. 2019

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SnTe hosts ferroelectricity that competes with its weak non-trivial band topology: in the highsymmetry rocksalt structure -in which its intrinsic electric dipole is quenched-this material develops metallic surface bands, but in its rhombic ground-state configuration -that hosts a non-zero spontaneous electric dipole-the crystalline symmetry is lowered and the presence of surface electronic bands is not guaranteed. Here, the type of ferroelectric coupling and the atomistic and electronic structure of SnTe films ranging from 2 to 40 ALs are examined on freestanding samples, to which atomic layers were gradually added. 4 AL SnTe films are antiferroelectrically-coupled, while thicker freestanding SnTe films are ferroelectrically-coupled. The electronic band gap reduces its magnitude in going from 2 ALs to 40 ALs but it does not close due to the rhombic nature of the structure. These results bridge the structure of SnTe films from the monolayer to the bulk. arXiv:1904.01702v1 [cond-mat.mes-hall]

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“…Studies of these systems have also drawn significant attention in the past. The first observation of the visible band spectra of tin selenide ͑SnSe͒ and tin telluride ͑SnTe͒ dates back to the early 1930s, 1,2 and, in the subsequent years, many other UV and visible band systems of SnSe and SnTe were observed both in emission and in absorption, [3][4][5][6][7][8] allowing the spectroscopic constants of the low-lying electronic states of these molecules to be determined. Matrix IR spectroscopy, 9 photoelectron spectroscopy, 10 and mass spectrometry thermodynamical studies 11 of tin selenide and tin telluride have also been performed.…”

Section: Introductionmentioning

confidence: 99%

The rotational spectra, potential function, Born-Oppenheimer breakdown, and magnetic shielding of SnSe and SnTe

Bizzocchi

Giuliano

Hess

et al. 2007

The Journal of Chemical Physics

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The pure rotational spectra of 27 isotopic species of SnSe and SnTe have been measured in the frequency range of 5-24 GHz using a Fabry-Perot-type resonator pulsed-jet Fourier-transform microwave spectrometer. Gaseous samples of both chalcogenides were prepared by laser ablation of suitable target rods and were stabilized in supersonic jets of Ar. Global multi-isotopolog analyses of all available high-resolution data produced spectroscopic Dunham parameters Y01, Y11, Y21, Y31, Y02, and Y12 for both species, as well as Born-Oppenheimer breakdown (BOB) coefficients delta01 for Sn, Se, and Te. A direct fit of the same data sets to an appropriate radial Hamiltonian yielded analytic potential energy functions and BOB radial functions for the X 1Sigma+ electronic state of both SnSe and SnTe. Additionally, the magnetic hyperfine interaction produced by the dipolar nuclei 119Sn, 117Sn, 77Se, and 125Te was observed, yielding first determinations of the corresponding spin-rotation coupling constants.

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Ultra-violet absorption band-systems of SnSe and SnTe

Cited by 16 publications

References 5 publications

Partial Pressures and Thermodynamic Properties of PbTe ‐ SnTe Solid and Liquid Solutions with 13, 20, and 100 Mole Percent SnTe

Partial Pressures and Thermodynamic Properties of PbTe ‐ SnTe Solid and Liquid Solutions with 13, 20, and 100 Mole Percent SnTe

From an atomic layer to the bulk: Low-temperature atomistic structure and ferroelectric and electronic properties of SnTe films

The rotational spectra, potential function, Born-Oppenheimer breakdown, and magnetic shielding of SnSe and SnTe

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