Ultra-Wideband Chip Attenuator for Precise Noise Measurements at Cryogenic Temperatures

Cano, Juan Luis; Wadefalk, Niklas; Gallego-Puyol, Juan Daniel

doi:10.1109/tmtt.2010.2058276

Cited by 38 publications

(19 citation statements)

References 9 publications

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“…[25] In order to overcome this problem, we replaced the commercial ML with a custom-made attenuator that provided negligible temperature gradient between the metallic package and the attenuator chip [Cano et al, 2010]. Note that different from Cano's original approach of using it as a two-port attenuation component, we used the attenuator as a one-port PT in our experiments.…”

Section: Thermal Equilibrium Of Pt At Cryogenic Temperaturementioning

confidence: 99%

“…Progress on modeling [Malmkvist et al, 2008] and fabrication techniques [Ye et al, 2005] has allowed the continuous advance of cryogenic HEMT performance. Despite the fast development and the great demands from various applications, there are a limited number of reports on accurate characterization of noise properties of cryogenic amplifiers [Laskar et al, 1996;Hu and Weinreb, 2004;Randa et al, 2006;Cano et al, 2010;Russell and Weinreb, 2012].…”

Section: Introductionmentioning

confidence: 99%

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Measurement and uncertainty analysis of a cryogenic low‐noise amplifier with noise temperature below 2 K

Randa

Billinger

et al. 2013

Radio Science

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We report measurements and uncertainty analysis on a cryogenic low‐noise amplifier (LNA) with a very low noise temperature (NT), among the lowest noise performances reported at microwave frequencies. The LNA consists of three stages of InP high electron mobility transistors with a gate length of 130 nm. It exhibits about 44 dB gain and less than 2 K average NT in the operational band of 4 GHz to 8 GHz. A detailed uncertainty analysis is outlined to evaluate a variety of error sources in the measurement. The calculated uncertainty shows as low as 0.1 dB on the measured gain of about 44 dB and 0.18 K on the measured NT of 1.65 K, indicating excellent measurement accuracy. A breakdown of the uncertainty components helps identify the major causes of the overall uncertainty and enlightens us about how to further improve accuracy. It is important to know the actual physical temperature of the passive termination that is used as a cryogenic noise source in experiments. Due to its large temperature gradients, the commercial matched load is replaced by a custom‐made attenuator that is isothermal and consequently provides reliable NT measurements of the LNA. The precision measurement technique developed at the National Institute of Standards and Technology is independent from the manufacturers' characterization method. This study marks the first time that such a low NT from a cryogenic LNA is verified independently with such a low uncertainty.

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Section: Thermal Equilibrium Of Pt At Cryogenic Temperaturementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Measurement and uncertainty analysis of a cryogenic low‐noise amplifier with noise temperature below 2 K

Randa

Billinger

et al. 2013

Radio Science

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“…Nowadays, attenuators are widely used in radar system and wireless communication system for adjusting signal power and impedance matching [1,2,3,4,5]. The step attenuators consist of constant insertion loss attenuators and single-poledouble-throw (SPDT) switches have the advantages of low cost and flexible design.…”

Section: Introductionmentioning

confidence: 99%

“…The step attenuators consist of constant insertion loss attenuators and single-poledouble-throw (SPDT) switches have the advantages of low cost and flexible design. The constant insertion loss attenuators can be fabricated using SMD thin film resistor chip process [1,2,4]. But for the high insertion loss (20 dB, for example), the resistance of resistors are so big that thin-film resistors with high length-width ratio will introduced parasitic capacitance and inductance which extremely restrict the bandwidth [6].…”

Section: Introductionmentioning

confidence: 99%

“…But for the high insertion loss (20 dB, for example), the resistance of resistors are so big that thin-film resistors with high length-width ratio will introduced parasitic capacitance and inductance which extremely restrict the bandwidth [6]. One way to avoid this is to use low insertion loss attenuators cascade as high one [1,4]. But this method will obviously increase the chip size.…”

Section: Introductionmentioning

confidence: 99%

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Wideband attenuators using distributed resistors for attenuation up to 30 dB

Zhong

Liu

2016

IEICE Electron. Express

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In this paper, attenuators with distributed resistor networks for attenuation up to 30 dB from DC to 25 GHz are presented. The distributed thin-film resistor network is embedded in coplanar waveguide (CPW) for microwave application. The sheet resistance and size of distributed thin-film resistor network are accurately calculated by conformal mapping and elliptic function for corresponding attenuation. The achieved attenuators is based on the use of tantalum-nitride (TaN) thin-film resistors with low mean temperature coefficient of resistance (TCR), high resistance silicon substrate and Au CPW. Microwave testing results show excellent performance with return losses better than 27 dB and insertion losses of 10.23 ² 0.12 dB, 15.23 ² 0.18 dB, 20.09 ² 0.23 dB and 29.17 ² 0.55 dB in the interesting frequency range.

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Fabrication of (Au, Mn)/ZnPc/Ag Interfaces as Radiowave/Microwave Band Filters

Qasrawi

Zyoud

2020

Physica Status Solidi (a)

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Herein, zinc phthalocyanine (ZnPc) layers are used as an active material to fabricated radiowave/microwave band filters. The thin layers of ZnPc are coated onto Au and Mn thin‐film substrates to form ohmic and Schottky interfaces, respectively. The Au/ZnPc and Mn/ZnPc devices are structurally and electrically characterized by means of X‐ray diffraction and impedance spectroscopy techniques in the frequency domain of 0.01–1.80 GHz, respectively. The structural investigations show that both interfaces exhibit strained structures of the monoclinic phase of ZnPc. It is also observed that while the Au/ZnPc/Ag devices display negative capacitance (NC) effects in the microwave region above 1.46 GHz, the Mn/ZnPc/Ag devices show resonance–antiresonance capacitive response in the radiowave region accompanied with NC effects in the range of 0.06–1.80 GHz. In addition, analyses of the reflection coefficient spectra have shown the ability of the (Mn, Au)/ZnPc/Ag interfaces to behave as a typical high‐/low‐bandpass filters. The filters can be operated in microwaves and radiowave ranges. The return loss spectral investigations on these filters have shown their ability to reach the market standards.

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Ultra-Wideband Chip Attenuator for Precise Noise Measurements at Cryogenic Temperatures

Cited by 38 publications

References 9 publications

Measurement and uncertainty analysis of a cryogenic low‐noise amplifier with noise temperature below 2 K

Measurement and uncertainty analysis of a cryogenic low‐noise amplifier with noise temperature below 2 K

Wideband attenuators using distributed resistors for attenuation up to 30 dB

Fabrication of (Au, Mn)/ZnPc/Ag Interfaces as Radiowave/Microwave Band Filters

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