Ultra-Wideband Dual-Mode Doherty Power Amplifier Using Reciprocal Gate Bias for 5G Applications

Li, Meng; Pang, Jingzhou; Li, Yue; Zhu, Anding

doi:10.1109/tmtt.2019.2932977

Cited by 43 publications

(28 citation statements)

References 30 publications

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“…For Mode I, the Doherty operation is the same as that mentioned in the previous subsection. For Mode II, the carrier back-off resistance presents similar characteristic as introduced in [28]. Compared with Mode I, the number of bands is doubled in Mode II.…”

Section: B Increase Band Number Using Reciprocal Gate Bias Dual-modementioning

confidence: 88%

“…Based on the analysis introduced in [27] and [28], the carrier back-off impedance can be easily calculated as,…”

Section: A Multi-band Dpa Using Phase Periodic Matching Networkmentioning

confidence: 99%

“…In 5G applications, a large number of frequency bands need be supported. In [28], we presented a design method of dual-mode DPA using reciprocal gate biases, which can extend the bandwidth or increase the bands number without changing the load modulation network. To further increase the bandwidth of the proposed DPA, the same reciprocal gate biases approach can be employed to operate the DPA in two different modes to support a large number of bands.…”

Section: B Increase Band Number Using Reciprocal Gate Bias Dual-modementioning

confidence: 99%

“…In this work, GaN HEMTs CGH40006s from Wolfspeed are used as the active devices, which have the R opt of 62 Ω. The parasitic and package parameters obtained from the turn-off S-parameters in [28] is also used here. The circuit architecture and optimization method introduced in Section III are employed to realize the required PPMN with α = 1.86.…”

Section: Design Of Dual-mode 6-band Dpa Using the Proposed Architmentioning

confidence: 99%

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Multiband Dual-Mode Doherty Power Amplifier Employing Phase Periodic Matching Network and Reciprocal Gate Bias for 5G Applications

Pang

Dai

et al. 2020

IEEE Trans. Microwave Theory Techn.

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This paper presents a novel method to design the multi-band Doherty power amplifier (DPA). It is illustrated that phase periodic matching networks (PPMNs) can be used as multi-band impedance inverters, offset elements and phase compensators to realize multi-band DPAs. Moreover, the number of Doherty operation bands can be further increased by employing the reciprocal gate biases. A 6-band dual-mode DPA with 1.8-2.2/3.9-4.3 GHz operation bands in Mode I and 1.52-1.72/2.38-2.53/3.67-3.82/4.53-4.68 GHz operation bands in Mode II using commercial GaN transistors is designed and implemented to validate the proposed method. The fabricated DPA achieves 8.7-13.5 dB gain and 39.6-41.5 dBm peak output power at all the designed bands. Drain efficiency of 49.2%-54.5% and 42.2%-56.7% is measured at 6 dB output back-off in Mode I and Mode II, respectively. When stimulated by a 5-carrier 100 MHz OFDM signal with 7.7 dB peak to average power ratio (PAPR), adjacent channel power ratio (ACPR) of better than-48.9 dBc can be obtained by the proposed DPA after digital predistortion with 35.5%-50.1% average drain efficiency at 1.65/1.95/2.45/3.75/4.1/4.6 GHz, respectively.

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Section: B Increase Band Number Using Reciprocal Gate Bias Dual-modementioning

confidence: 88%

“…Based on the analysis introduced in [27] and [28], the carrier back-off impedance can be easily calculated as,…”

Section: A Multi-band Dpa Using Phase Periodic Matching Networkmentioning

confidence: 99%

Section: B Increase Band Number Using Reciprocal Gate Bias Dual-modementioning

confidence: 99%

Section: Design Of Dual-mode 6-band Dpa Using the Proposed Architmentioning

confidence: 99%

See 2 more Smart Citations

Multiband Dual-Mode Doherty Power Amplifier Employing Phase Periodic Matching Network and Reciprocal Gate Bias for 5G Applications

Pang

Dai

et al. 2020

IEEE Trans. Microwave Theory Techn.

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“…To design the OMNs, the model of the parasitic and package parameters of the used transistors was first built as shown in Fig. 14 based on the S-parameters of the transistor when it is turned off [31]. The OMNs employed the T-shaped transmission line (TL) structure with wideband characteristics in the band of 3.1-3.6 GHz.…”

Section: Design Of the Proposed Rf-input Slmbamentioning

confidence: 99%

Analysis and Design of Highly Efficient Wideband RF-Input Sequential Load Modulated Balanced Power Amplifier

Pang

et al. 2020

IEEE Trans. Microwave Theory Techn.

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The analysis and design of an RF-input sequential load modulated balanced power amplifier (SLMBA) are presented in this paper. Unlike the existing LMBAs, in this new configuration, an over-driven class-B amplifier is used as the carrier amplifier while the balanced PA pair is biased in class-C mode to serve as the peaking amplifier. It is illustrated that the sequential operation greatly extends the high efficiency power range and enables the proposed SLMBA to achieve high backoff efficiency across a wide bandwidth. An RF-input SLMBA at 3.05-3.55 GHz band using commercial GaN transistors is designed and implemented to validate the proposed architecture. The fabricated SLMBA attains a measured 9.5-10.3 dB gain and 42.3-43.7 dBm saturated power. Drain efficiency of 50.9-64.9/46.8-60.7/43.2-51.4% is achieved at 6/8/10 dB output power back-off within the designed bandwidth. By changing the bias condition of the carrier device, higher than 49.1% drain efficiency can be obtained within 12.8 dB output power range at 3.3 GHz. When driven by a 40 MHz OFDM signal with 8 dB peak to average power ratio (PAPR), the proposed SLMBA achieves adjacent channel leakage ratio (ACLR) better than-25 dBc with an average efficiency of 63.2% without digital predistortion (DPD). When excited by a 10-carrier 200 MHz OFDM signal with 10 dB PAPR, the average efficiency can reach 48.2% and-43.9 dBc ACLR can be obtained after DPD.

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Broadband performance assessment of a microwave power transistor employing the real frequency technique

Kılınç

Ejaz

Yarman

et al. 2022

Circuit Theory & Apps

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Generation of proper source/ load pull impedances for a selected active device is essential to design an RF power amplifier for optimum gain and power added efficiency. As they are obtained, these impedances may not be realizable network functions over the desired frequency band to yield the input and the output matching networks for the amplifier. Therefore, in this paper, first, we introduce a new method to test if a given impedance is realizable. Then, a novel "Real Frequency Line Segment Technique" based numerical procedure is introduced to assess the gain-bandwidth limitations of the given source and load impedances, which in turn results in the ultimate RF-power intake and power delivery capacity of the amplifier. During the numerical performance assessments process, a robust tool called "Virtual Gain Optimization" is presented. Finally, a new definition called "Power-Performance-Product" is introduced to measure the quality of an active device. Examples are presented to test the realizability of the given source/load pull data and to assess the gain-bandwidth limitations of the given source/load pull impedances for a 45W-GaN power transistor, namely "Wolfspeed CG2H40045", over 0.8-3.8 GHz bandwidth.

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Ultra-Wideband Dual-Mode Doherty Power Amplifier Using Reciprocal Gate Bias for 5G Applications

Cited by 43 publications

References 30 publications

Multiband Dual-Mode Doherty Power Amplifier Employing Phase Periodic Matching Network and Reciprocal Gate Bias for 5G Applications

Multiband Dual-Mode Doherty Power Amplifier Employing Phase Periodic Matching Network and Reciprocal Gate Bias for 5G Applications

Analysis and Design of Highly Efficient Wideband RF-Input Sequential Load Modulated Balanced Power Amplifier

Broadband performance assessment of a microwave power transistor employing the real frequency technique

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