Ultra-Wideband GaN Power Amplifiers – From Innovative Technology to Standart Products

Kistchinsky, A.

doi:10.5772/16590

Cited by 7 publications

(8 citation statements)

References 13 publications

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“…HEMTs to achieve higher breakdown voltages, lower gate leakage currents, higher cutoff frequencies, higher maximum available gains, and lower gate-drain capacitances [7], [15].…”

Section: Research Focusmentioning

confidence: 99%

“…AlGaAs) is an n-type material, providing donor. As electrons occupy the sub-bands within the quantum well, their mobility is restricted to the x-and y-dimensions allowing for higher carrier density (more current, more gain) within the 2DEG of the HEMT device [5], [6], [7].…”

mentioning

confidence: 99%

“…• High Critical Breakdown Field (E C ): Leads to higher realizable breakdown voltages that can provide large power densities when coupled with high current densities within the 2DEG of the HEMT [7]. One of the major reliability concerns in current GaN technologies is the creation of crystallographic defect formations during fabrication and through the inverse piezoelectric effect [10].…”

mentioning

confidence: 99%

“…, [7], [9]. ................. 6 To address the many drawbacks VEDs present, solid-state microwave transistor devices were created and are constantly being improved to match, if not exceed the exceptional capabilities of VEDs while lessening the negative trade-offs they present.…”

mentioning

confidence: 99%

“…• Large Bandgap Energy (E g ): Determines the transistors ability to operate under high levels of temperature, radiation, and electric fields [1], [7].…”

mentioning

confidence: 99%

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DC, RF, and Thermal Characterization of High Electric Field Induced Degradation Mechanisms in GaN-on-Si High Electron Mobility Transistors

Bloom¹

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Gallium Nitride (GaN) high electron mobility transistors (HEMTs) are becoming increasingly popular in power amplifier systems as an alternative to bulkier vacuum tube technologies. GaN offers advantages over other III-V semiconductor heterostructures such as a large bandgap energy, a low dielectric constant, and a high critical breakdown field. The aforementioned qualities make GaN a prime candidate for high-power and radiation-hardened applications using a smaller form-factor. Several different types of semiconductor substrates have been considered for their thermal properties and costeffectiveness, and Silicon (Si) has been of increasing interest due to a balance between both factors.In this thesis, the DC, RF, and thermal characteristics of GaN HEMTs grown on Si-substrates will be investigated through a series of accelerated lifetime experiments. A figure of merit known as the critical voltage is explored and used as the primary means by which the GaN-on-Si devices are electrically strained. The critical voltage is defined as the specific voltage bias by which a sudden change in device performance is experienced due to a deformation of the target GaN HEMT's epitaxial structure. Literature on the topic details the inevitable formation of pits and cracks localized under the drain-side of the gate contact that promote electrical degradation of the devices via the inverse piezoelectric effect. Characteristic changes in device performance due to high field strain are recorded and physical mechanisms behind observed degraded performance are investigated.The study assesses the performance of roughly 60 GaN-on-Si HEMTs in four experimental settings. The first experiment investigates the critical voltage of the device in the off-state mode of operation and explores device recovery post-stress. The second experiment analyzes alterations in DC and RF performance under varying thermal loads and tracks the dependence of the critical voltage on temperature. The third experiment examines electron trapping within the HEMTs as well as detrapping methodologies. The final experiment links the changes in RF performance induced by high field strain to the small-signal parameters of the HEMT. Findings from the research conclude the existence of process-dependent defects that originate during the growth process and lead to inherent electron traps in unstressed devices. Electron detrapping due to high electric field stress applied to the HEMTs was observed, potentially localized within the AlGaN layer or GaN buffer of the HEMT. The electron detrapping in turn contributed to drain current recovery and increased unilateral performance of the transistor in the RF regime. Thermal experiments resulted in a positive shift in critical voltage, which enhanced gate leakage current at lower gate voltage drives. v ACKNOWLEDGMENTS I would like to first and foremost thank Dr. Dennis Derickson for giving me the opportunity to work on this research initiative. Without Dr. Derickson's guidance and mentorship through the entirety of the project, the...

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“…HEMTs to achieve higher breakdown voltages, lower gate leakage currents, higher cutoff frequencies, higher maximum available gains, and lower gate-drain capacitances [7], [15].…”

Section: Research Focusmentioning

confidence: 99%

mentioning

confidence: 99%

mentioning

confidence: 99%

mentioning

confidence: 99%

“…• Large Bandgap Energy (E g ): Determines the transistors ability to operate under high levels of temperature, radiation, and electric fields [1], [7].…”

mentioning

confidence: 99%

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DC, RF, and Thermal Characterization of High Electric Field Induced Degradation Mechanisms in GaN-on-Si High Electron Mobility Transistors

Bloom¹

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A 1.8 GHz wideband high power amplifier with flat gain response by exploiting microstrip high‐pass‐filter

Malik

Sheta

Elshafiey

2018

Micro & Optical Tech Letters

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A 1.8 GHz broadband high power amplifier (PA) with 144% fractional bandwidth is presented in this article. The proposed PA achieves a power added efficiency of 40%–56% for the entire band. To ensure flat gain response, a novel idea of integrating a microstrip high pass filter (HPF) in the input matching network is proposed. The incorporation of HPF reduces the unusual high gain at low frequency and thus results in a flat gain of 14.4 ±1 dB for the entire band. The matching circuits are realized on Taconic RF35 with dielectric constant of 3.5 and thickness of 0.76 mm. The high fractional bandwidth of the proposed PA makes it suitable to be used for the recent and future wireless communication systems.

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A highly linearized second harmonic injected GaN power amplifier

Abbasnezhad

Tayarani

Abrishamifar

et al. 2022

Micro & Optical Tech Letters

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This article presents an active second harmonic injection technique for linearizing power amplifiers (PAs). In this method, a second harmonic signal with adjustable amplitude and phase, which is generated by a differential pair network, is injected into the input of a PA in a forward path. The tunable input and output matching circuits of the proposed second harmonic generator provide linearization capability in a wide frequency band. To validate the concept, the proposed second harmonic injection technique was implemented to linearize a GaN PA working around 1.5 GHz. It was shown that applying the proposed linearization method increases the output 1-dB compression point from 33.5 dBm to 39.5 dBm (about 2 dB lower than saturation power) under the CW signal. Furthermore, the backed-off efficiency at a higher adjacent channel power ratio was improved, and improvement of 16 dB at 200 MHz frequency bandwidth was achieved for an 8 MS/s 64-quadraticamplitude modulation signal.

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Ultra-Wideband GaN Power Amplifiers – From Innovative Technology to Standart Products

Cited by 7 publications

References 13 publications

DC, RF, and Thermal Characterization of High Electric Field Induced Degradation Mechanisms in GaN-on-Si High Electron Mobility Transistors

DC, RF, and Thermal Characterization of High Electric Field Induced Degradation Mechanisms in GaN-on-Si High Electron Mobility Transistors

A 1.8 GHz wideband high power amplifier with flat gain response by exploiting microstrip high‐pass‐filter

A highly linearized second harmonic injected GaN power amplifier

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