“…Commercial power amplifiers in 0.25-m GaAs MESFET and pHEMT technologies have PAEs of 11%, 15%, and 31%, respectively [59]- [61]. A 24-GHz three-stage power amplifier, designed for an automotive SiGe bipolar technology on a high-resistivity (1 k cm) substrate, achieves 7.5-dB small-signal gain, and 6.5-dB gain at 12-dBm output power (i.e., 2.2-dB gain per stage) [15]. However, the PAE was not reported, and few circuit details were given.…”