Ultrafast and Electrically Tunable Rabi Frequency in a Germanium Hut Wire Hole Spin Qubit

Li, He; Wang, Ke; Gao, Fei; Leng, Jinhua; Liu, Yang; Zhou, Yuchen; Cao, Gang; Wang, Ting; Zhang, Jianjun; Huang, Peihao; Li, Hai-Ou; Guo, Guo-Ping

doi:10.1021/acs.nanolett.3c00213

Cited by 12 publications

(1 citation statement)

References 54 publications

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“…The construction of such a transistor will make it possible to design a quantum processor with high computing power that is capable of solving important scientific problems in a short time in various fields such as materials science, medicine, and machine learning. The most promising material for creating quantum computers is flat germanium nanowire [4][5][6], due to the fact that the holes in this nanowire have a strong spin-orbit coupling [7], a light effective mass [8], ease of control of the electric field [9], compatibility with existing Si-technology, and ability to operate in much lower magnetic fields [10]. In Ref.…”

Section: Introductionmentioning

confidence: 99%

Possibilities of Controlling the Quantum States of Hole Qubits in an Ultrathin Germanium Layer Using a Magnetic Substrate: Results from ab Initio Calculations

Chibisov,

Chibisova,

Prokhorenko

et al. 2023

Nanomaterials

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Using density functional theory in the noncollinear approximation, the behavior of quantum states of hole qubits in a Ge/Co:ZnO system was studied in this work. A detailed analysis of the electronic structure and the distribution of total charge density and hole states was carried out. It was shown that in the presence of holes, the energetically more favorable quantum state is the state |0˃, in contrast to the state |1˃ when there is no hole in the system. The favorability of hole states was found to be dependent on the polarity of the applied electric field.

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Section: Introductionmentioning

confidence: 99%

Possibilities of Controlling the Quantum States of Hole Qubits in an Ultrathin Germanium Layer Using a Magnetic Substrate: Results from ab Initio Calculations

Chibisov,

Chibisova,

Prokhorenko

et al. 2023

Nanomaterials

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Progress of Gate‐Defined Semiconductor Spin Qubit: Host Materials and Device Geometries

Liu,

Guan,

Luo

et al. 2024

Adv Funct Materials

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Quantum computing offers the potential to revolutionize information processing by exploiting the principles of quantum mechanics. Among the diverse quantum bit (qubit) technologies, silicon‐based semiconductor spin qubits have emerged as a promising contender due to their potential scalability and compatibility with existing semiconductor technologies. In this paper, the latest developments of spin qubits in gate‐defined semiconducting nanostructures made of silicon and germanium, starting from the basic properties of electron and hole states in group‐IV semiconductors, are reviewed. Specifically, various nanostructures that exploit their unique microscopic properties for qubit implementations, elaborating on the advances and challenges in experiments, are discussed. Strategies for enhancing qubit performance, such as designing new nanostructures and identifying suitable operating points, particularly those involving the valleys of electron qubits and the heavy‐hole–light‐hole mixing of hole qubits, are also highlighted. This comprehensive review thus provides valuable insights into the current state‐of‐the‐art in semiconductor quantum computing and suggests avenues for future research.

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Understanding the Spin of Metal Complexes from a Single‐Molecule Perspective

Guo,

Gao,

Gao

et al. 2024

Small Methods

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Compared with aggregate spin behavior, single‐molecule spin behavior can be accurately understood, controlled, and applied at the level of basic building blocks. The potential of single‐molecule electronic and nuclear spins for monitoring and control represents a beacon of promise for the advancement of molecular spin devices, which are fabricated by connecting a single molecule between two electrodes. Metal complexes, celebrated for their superior magnetic attributes, are widely used in the devices to explore spin effects. Moreover, single‐molecule electrical techniques with high signal‐to‐noise ratio, temporal resolution, and reliability help to understand the spin characteristics. In this review, the focus is on the devices with metal complexes, especially single‐molecule magnets, and systematically present experimental and theoretical state of the art of this field at the single‐molecule level, including the fundamental concepts of the electronic and nuclear spin and their basic spin effects. Then, several experimental methods developed to regulate the spin characteristics of metal complexes at single‐molecule level are introduced, as well as the corresponding intrinsic mechanisms. A brief discussion is provided on the comprehensive applications and the considerable challenges of single‐molecule spin devices in detail, along with a prospect on the potential future directions of this field.

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Ultrafast and Electrically Tunable Rabi Frequency in a Germanium Hut Wire Hole Spin Qubit

Cited by 12 publications

References 54 publications

Possibilities of Controlling the Quantum States of Hole Qubits in an Ultrathin Germanium Layer Using a Magnetic Substrate: Results from ab Initio Calculations

Possibilities of Controlling the Quantum States of Hole Qubits in an Ultrathin Germanium Layer Using a Magnetic Substrate: Results from ab Initio Calculations

Progress of Gate‐Defined Semiconductor Spin Qubit: Host Materials and Device Geometries

Understanding the Spin of Metal Complexes from a Single‐Molecule Perspective

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