Ultrafast bandgap technique: light-induced semiconductor augmentation

Zakharova, I. K.; Rafailov, Michael K.

doi:10.1117/12.2054010

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2015

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“…Ultra-short laser pulse may temporally change density of available transition states in valence band in the same way as cooling [2]. Depletion of states available for transition done by ultra-fast/short laser pulse has the same nature as bleaching.…”

Section: Introductionmentioning

confidence: 98%

Detector response to high repetition rate ultra-short laser pulses. I

Zakharova

Rafailov

2015

SPIE Proceedings

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Optical nonlinearities in semiconductors and semiconductor detectors have been widely investigated and exploited for many scientific and industrial applications. The correlation of optical and electronic characteristics in these detector materials under exposure of ultra-short laser pulses at high pulse repetition rates is still not very well known. These effects may be quite beneficial for many applications ranging from chemical and biological sensing to light-induced superconductivity. In this paper, we discuss the effect of extended bleaching in order to demonstrate sensing applications of such phenomenon as an example. Pump-probe measurements in bulk semiconductors will be presented to quantify the transient absorption dynamics and relate this to the electronic response of the detector devices. This effect is not limited semiconductors and may affect other matter states and electronic structures, like dielectrics.

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Section: Introductionmentioning

confidence: 98%