Ultrafast carrier dynamics of conformally grown semi-polar (112̄2) GaN/InGaN multiple quantum well co-axial nanowires on m-axial GaN core nanowires

Abstract

The growth of semi-polar (112̄2) GaN/InGaN multiple-quantum-well (MQW) co-axial heterostructure shells around m-axial GaN core nanowires on a Si substrate using MOCVD is reported for the first time.

Three-dimensional hierarchical semi-polar GaN/InGaN MQW coaxial nanowires on a patterned Si nanowire template

“…4(e and f), as it was observed in our previous publications. 26,37 The optical properties of the active region grown on the semi-polar plane are enhanced when the inclination angle of the polar-plane to the semi-polar growth plane ranges from 45 to 60 . For the incorporation of indium into the InGaN QWs, over a wide range of growth temperatures, the most favorable planes are (11 22) and (10 21).…”

“…As a result, several interesting structures such as InGaN/GaN axial NWs, InGaN/ GaN core-shell NWs, and InGaN/GaN multiple quantum wells (MQWs) on GaN core NWs were reported. [24][25][26] The morphology of these NWs controls their optical properties, structural stability, and manufacturability. From this perspective, InGaN/ GaN hierarchical NWs could offer enhanced research space for advanced optical properties owing to their complicated NW morphology.…”

High-Bandwidth Green Semipolar (20–21) InGaN/GaN Micro Light-Emitting Diodes for Visible Light Communication

“…Consequently, semipolar GaN crystals can accommodate a much higher In content, which is beneficial for longwavelength MQWs in InGaN/GaN devices. 14 The most promising growth orientation for GaN-based long-wavelength devices is the semipolar plane. The applications of the semipolar (20−21) and (20−2−1) epitaxial structures have been proven to effectively suppress the effects of QCSE and bridge the green gap with a larger output power.…”

“…The incorporation of In atoms into the semipolar plane has a much lower chemical potential requirement than that for both polar and nonpolar surfaces since the semipolar GaN surface has a lower repulsive interaction with the In atoms. Consequently, semipolar GaN crystals can accommodate a much higher In content, which is beneficial for long-wavelength MQWs in InGaN/GaN devices . The most promising growth orientation for GaN-based long-wavelength devices is the semipolar plane.…”

Epitaxial Growth of GaN Core and InGaN/GaN Multiple Quantum Well Core/Shell Nanowires on a Thermally Conductive Beryllium Oxide Substrate

“…Prior to the growth of the InGaN QW shell, the GaN shell was grown around the GaN core that converted the geometry of NWs from circular to triangular. 29 The triangle-shaped GaN shell was annealed in NH 3 at the same temperature adopting the same approach as reported in our previous work. 30 The grown GaN shell acted as a host for the monocrystalline growth of InGaN/GaN MQW shells.…”