2016
DOI: 10.1088/2053-1583/3/2/025020
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Ultrafast charge transfer in MoS 2 /WSe 2 p–n Heterojunction

Abstract: Atomically thin and sharp van der Waals heterojunction can be created by vertically stacking p-type monolayer tungsten diselenide (WSe 2 ) onto n-type molybdenum disulfide (MoS 2 ). Theory predicts that stacked MoS 2 and WSe 2 monolayer forms type II p-n junction, creating a built-in electric field across the interface which facilitates electron-hole separation and transfer. Gaining insights into the dynamics of charge transfer across van der Waals heterostructure is central to understanding lightphotocurrent … Show more

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Cited by 194 publications
(97 citation statements)
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“…We first study the degree of charge transfer across WSe2/SnSe2 heterojunction owing to the highly staggered type II band alignment ( Figure 1a) 46,47 . We employ photoluminescence (PL)…”
Section: Resultsmentioning
confidence: 99%
“…We first study the degree of charge transfer across WSe2/SnSe2 heterojunction owing to the highly staggered type II band alignment ( Figure 1a) 46,47 . We employ photoluminescence (PL)…”
Section: Resultsmentioning
confidence: 99%
“…This implies MoS2/WSe2 heterojunction could be have big potential for high-speed photodetectors. [82] Photoelectric properties of lateral heterojunctions based on only TMDCs. In addition to vertical heterojunctions, lateral 2D heterojunctions have also emerged.…”
Section: Photodetectors Based On Heterojunctions Of Only Tmdcsmentioning
confidence: 99%
“…Vertical junctions such as WSe 2 /MoS 2 16 and black phosphorus/MoS 2 17 can be formed by stacking two different 2D materials through Van der Waals forces. However, the band offsets between different TMDCs are pivotal, which could inhibit carrier transport.…”
Section: Introductionmentioning
confidence: 99%