2021
DOI: 10.1103/physrevb.104.085308
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Ultrafast electric control of cavity mediated single-photon and photon-pair generation with semiconductor quantum dots

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Cited by 10 publications
(20 citation statements)
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“…We also note that pumping schemes that achieve efficient population of the multiply excited state must be designed with care, where the optimal pumping scheme can be unique to emitter type. There are, for instance, a multitude of pumping schemes for biexcitons in semiconductor quantum dots [46][47][48][49][50][51]. We seek to calculate the quality, specifically the efficiency η and fidelity F, of the emitted photons via cascade decay from multiply excited states of cascade emitters.…”
Section: Discussionmentioning
confidence: 99%
“…We also note that pumping schemes that achieve efficient population of the multiply excited state must be designed with care, where the optimal pumping scheme can be unique to emitter type. There are, for instance, a multitude of pumping schemes for biexcitons in semiconductor quantum dots [46][47][48][49][50][51]. We seek to calculate the quality, specifically the efficiency η and fidelity F, of the emitted photons via cascade decay from multiply excited states of cascade emitters.…”
Section: Discussionmentioning
confidence: 99%
“…If not stated otherwise, the cavity energy E cavity is set equal to the biexciton-exciton transition energy such that E cavity = E XX − E X , which is equivalent to an emission wavelength of 1550 nm. [22] It was previously shown in a simplified model, that the visibility of the emitted photons is increased by decreasing the biexciton lifetime. Respectively, the visibility is decreased when the lifetime ratio increases.…”
Section: Emitter Structurementioning
confidence: 97%
“…Here, not only the excitation laser but also the cavity is strongly off-resonant to the QD transitions. [22] In order to keep the excitation process simple, here we use a Gaussian shaped pulse to directly generate biexciton population via the two-photon Rabi-flop absorption process. Varying the pulse length from 𝜏 ∈ [1ps, 10ps], the emission process yields high-quality photons throughout the investigated range of 6.…”
Section: Quantum Simulationmentioning
confidence: 99%
“…Despite these recent results, further improvements in the sample design and realization can be obtained: from the growth perspective, the presence of a p-layer in the implementation of the diode embedding the QDs requires the doping with carbon atoms that constitute an impurity during growth and in the MBE chamber itself, despite a minimal memory effect. ,, In high-frequency electrical device applications, using holes in p-doped structures instead of electrons in n-doped structures would limit the achievable speed due to their 20-times lower mobility allowing for fast control . For example, a scheme theoretically proposed in ref indeed requires an electrical Stark shift of the QD transitions on subpicosecond time scales to implement cavity-mediated single-photon and photon-pair generation with QDs. Additionally, in purely n-doped architectures (e.g., waveguides), the doping-related free carrier absorption is expected to be only half the p-type value, as reported in ref .…”
mentioning
confidence: 99%