“…For example, Li et al coated a carbon (C) layer on the surface of Si nanoparticles to resist their volume expansion, but the rigid C shell is easily damaged by the stress accumulated from the volume expansion during lithiation. To ensure conductivity while improving the flexibility of the buffer layer, research has focused on developing some flexible conductive substrates, such as graphene − and carbon nanotubes. − However, the preparation process of graphene and carbon nanotubes often requires harsh conditions or involves complex synthesis processes that add extra cost to the product. − Comparatively, MXene, as a novel transition metal carbide or nitride, combines the properties of graphene and graphene oxide with good electrical conductivity, surface chemistry, hydrophilicity, and excellent mechanical properties, which can be used as a good conductive substrate material. − Moreover, its preparation method by etching in LiF-dissolved HCl solution is simple and mild, and it is suitable for large-scale production and application. The general structural formula of MXene is M n +1 X n T x ( n = 1, 2 or 3), in which M represents the former transition metal element, X represents the carbon or/and nitrogen, and T x represents the surface functional group associated with the M layer, such as −F, −O, −OH, etc. , Among them, Ti 3 C 2 T x is the most representative of the MXenes family and has been applied as a conductive buffer substrate for silicon-based anodes.…”