2021
DOI: 10.1038/s41565-020-00828-6
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Ultrafast hole spin qubit with gate-tunable spin–orbit switch functionality

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Cited by 154 publications
(178 citation statements)
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“…Ultrafast control of hole spins has also been achieved in a Ge/Si core/shell nanowire 41 , though that hole system is quite different from ours. The key difference stems from the respective geometries.…”
Section: Discussionmentioning
confidence: 56%
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“…Ultrafast control of hole spins has also been achieved in a Ge/Si core/shell nanowire 41 , though that hole system is quite different from ours. The key difference stems from the respective geometries.…”
Section: Discussionmentioning
confidence: 56%
“…To date, several works on hole spin qubits have been reported in a multitude of systems, such as Si metal-oxide-semiconductor (MOS) 37 , undoped strained Ge quantum well 38 , 39 and GHW 40 structures, with Rabi frequencies in the range of 70–140 MHz. A recent experiment in Ge/Si core/shell nanowire has reached a very fast Rabi frequency of 435 MHz, with a short spin-orbit length of 3 nm 41 .…”
Section: Introductionmentioning
confidence: 99%
“…[ 21–28 ] Besides the electron system, a hole spin qubit in silicon or germanium is also under intensive study recently due to high mobility, suppressed coupling to nuclear noise, fast EDSR, and ease of fabrication. [ 28,107–134 ]…”
Section: Introductionmentioning
confidence: 99%
“…Si and Ge nanowires (NWs) have potential applications for high-performance transistors [1,2] and for disruptively quantum computation technology [3][4][5][6]. The controllable growth of NW arrays in wafer-scale remains the major challenge for large scale integration.…”
Section: Introductionmentioning
confidence: 99%