“…Here,t he kinetics of 528 nm, 543 nm, and 549 nm were chosen to represent the hole transfer process of PBDB-TF:PTIC,P BDB-TF:PTB4F,a nd PBDB-TF:PTB4Cl, respectively,w ith negligible contamination from acceptor materials.T he hole transfer kinetics in blend films (Figure 4d)c an be fitted by ab iexponential function: i = A 1 exp(Àt/t 1 ) + A 2 exp(Àt/t 2 ), with fast and slow component lifetimes of t 1 and t 2 and prefactors of A 1 and A 2 . As shown by previous studies, [18] the fast component can be ascribed to the direct interfacial hole transfer process and the slow component to the diffusion of excitons toward interfaces before dissociation. All three blends show similarly ultrafast rising kinetics,w ith al ife-time of 0.21 ps,0 .22 ps,a nd 0.18 ps corresponding to the interfacial hole transfer process,aswell as as low process of 6.14 ps,1 3.37 ps,a nd 14.56 ps corre- sponding to the diffusion-mediated hole transfer process for PTIC-, PTB4F-, and PTB4Cl-based blend films,respectively (Table S3).…”