Ultrafast intersubband relaxation dynamics at 1.55μm in GaN/AlN multiple quantum disk nanocolumns

Tanaka, Kunihito; Ikuno, K.; Kasai, Yohei; Fukunaga, Kohji; Kunugita, Hideyuki; Ema, Kazuhiro; Kikuchi, Akihiko; Kishino, Katsumi

doi:10.1016/j.jlumin.2007.11.062

Cited by 11 publications

(9 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Furthermore, nanowires present a large dielectric mismatch with their surroundings, and their diameter is generally smaller than the detected wavelength. These interesting features allow the engineering of the refractive index, or the electrical device cross-section, while maintaining the absorption characteristics of the bulk. − The ultrafast relaxation times of intersubband transitions and their insensitivity to surface phenomena constitute major advantages of nanowire photodetectors. On the basis of current planar technologies, an obvious material choice for nanowire intersubband devices would be GaAs/AlAs.…”

mentioning

confidence: 99%

See 1 more Smart Citation

Near-Infrared Intersubband Photodetection in GaN/AlN Nanowires

et al. 2017

View full text Add to dashboard Cite

Intersubband optoelectronic devices rely on transitions between quantum-confined electron levels in semiconductor heterostructures, which enables infrared (IR) photodetection in the 1-30 μm wavelength window with picosecond response times. Incorporating nanowires as active media could enable an independent control over the electrical cross-section of the device and the optical absorption cross-section. Furthermore, the three-dimensional carrier confinement in nanowire heterostructures opens new possibilities to tune the carrier relaxation time. However, the generation of structural defects and the surface sensitivity of GaAs nanowires have so far hindered the fabrication of nanowire intersubband devices. Here, we report the first demonstration of intersubband photodetection in a nanowire, using GaN nanowires containing a GaN/AlN superlattice absorbing at 1.55 μm. The combination of spectral photocurrent measurements with 8-band k·p calculations of the electronic structure supports the interpretation of the result as intersubband photodetection in these extremely short-period superlattices. We observe a linear dependence of the photocurrent with the incident illumination power, which confirms the insensitivity of the intersubband process to surface states and highlights how architectures featuring large surface-to-volume ratios are suitable as intersubband photodetectors. Our analysis of the photocurrent characteristics points out routes for an improvement of the device performance. This first nanowire based intersubband photodetector represents a technological breakthrough that paves the way to a powerful device platform with potential for ultrafast, ultrasensitive photodetectors and highly efficient quantum cascade emitters with improved thermal stability.

show abstract

mentioning

confidence: 99%

“…7 In contrast, for nanowires, dislocations are restricted to coalescence boundaries, 27 and they can be readily grown on cheap, large-area Si(111) substrates. Reports of intersubband absorption in nanowire ensembles 21,22,28 and of resonant tunneling transport in single nanowires 29,30 further highlight GaN/AlN heterostructures as a promising choice.…”

mentioning

confidence: 99%

Near-Infrared Intersubband Photodetection in GaN/AlN Nanowires

et al. 2017

View full text Add to dashboard Cite

show abstract

“…The large, inhomogeneous broadening of the absorption peaks is due to thickness/diameter variations in the NW ensemble. The result represent nevertheless a large improvement in terms of FHWM when compared with previous reports of ISB transition in NW heterostructures . The difference in the absorption peak between the two samples could easily be attributed to monolayer thickness fluctuations from wire to wire in the ensemble.…”

Section: Resultsmentioning

confidence: 43%

Intersubband absorption in Si‐ and Ge‐doped GaN/AlN heterostructures in self‐assembled nanowire and 2D layers

Ajay

Lim

Browne

et al. 2017

Physica Status Solidi (b)

View full text Add to dashboard Cite

show abstract

“…The current-voltage characteristics displayed negative differential resistance (NDR) with peak-to-valley ratios of up to 50:1 and current densities of 1 nA/μm 2 at low temperatures. However, the In the case of the wurtzite III-nitride material system, the lower density of structural defects in self-assembled nanowire heterostructures has made it possible to observe ISB transitions the short-and mid-wavelength IR ranges [178][179][180][181][182]. Figure 19 presents the structural properties of a Ge-doped GaN/AlN nanowire heterostructure that displays ISB absorption around 1.…”

Section: Interband Nanowire Photodetectorsmentioning

confidence: 99%

Nanowire photodetectors based on wurtzite semiconductor heterostructures

Spies¹,

Monroy²

2019

Semicond. Sci. Technol.

View full text Add to dashboard Cite

Using nanowires for photodetection constitutes an opportunity to enhance the absorption efficiency while reducing the electrical cross-section of the device. They present interesting features like compatibility with silicon substrates, which offers the possibility of integrating detector and readout circuitry, and facilitates their transfer to flexible substrates. Within a nanowire, it is possible to implement axial and radial (coreshell) heterostructures. These two types can be combined to obtain three-dimensional carrier confinement (dot-in-a-wire). The incorporation of heterostructures in nanowire photodetectors opens interesting opportunities of application and performance improvement. Heterojunctions or type-II heterostructures favor the separation of the photogenerated electrons and holes, and the implementation of quantum dots in a nanowire can be applied to the development of quantum photodetectors. This paper provides a general review of latest progresses in nanowire photodetectors, including single nanowires and heterostructured nanowires.

show abstract

Ultrafast intersubband relaxation dynamics at 1.55μm in GaN/AlN multiple quantum disk nanocolumns

Cited by 11 publications

References 11 publications

Near-Infrared Intersubband Photodetection in GaN/AlN Nanowires

Near-Infrared Intersubband Photodetection in GaN/AlN Nanowires

Intersubband absorption in Si‐ and Ge‐doped GaN/AlN heterostructures in self‐assembled nanowire and 2D layers

Nanowire photodetectors based on wurtzite semiconductor heterostructures

Contact Info

Product

Resources

About