Ultrafast Laser-Induced Elastodynamics in Single Crystalline Silicon Part II: Near-Field Response

Qi, Xuele; Suh, C. Steve

doi:10.1080/01495730802637399

Cited by 9 publications

(4 citation statements)

References 8 publications

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“…It is seen that l travels as waves with finite speed. In contrast to the observations made in [24,25] where the parabolic energy equations admit thermal diffusion and permit thermal disturbances to be registered instantaneously everywhere in the model domain, the l wave is seen to have propagated less than 10 m in the thickness (z-) direction and approximately 15 m in the radial (r-) direction. Since the remaining model domain stays thermally undisturbed, it is evident that the heat affected zone is finite and highly localized.…”

Section: Variation Of Lattice Temperaturecontrasting

confidence: 60%

“…Since the remaining model domain stays thermally undisturbed, it is evident that the heat affected zone is finite and highly localized. Moreover, compared with the parabolic counterpart reported in [25], l in Figure 4 demonstrates much faster attenuation with significantly lower amplitude. As the ambient temperature increases from room temperature to over 1000 K, the dynamic behavior of the silicon wafer is no longer elastic but rather predominantly elastoviscoplastic.…”

Section: Variation Of Lattice Temperaturementioning

confidence: 76%

“…As a remedy, a multi-time scale axisymmetric model incorporating the parabolic-type energy balance equation that considers coupled thermal-mechanical near-field response was recently published [24,25], followed by a revision employing hyperbolic energy transport equations that resolves the dilemma of infinite thermal propagation speed admitted by the parabolic-type formulation [26,27]. Derived without considering thermal effects, the governing formulations presented in Refs.…”

Section: Introductionmentioning

confidence: 99%

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Elasto-Viscoplastic Response of Silicon to Femtosecond Laser Heating at Elevated Temperature

Suh

2011

Journal of Thermal Stresses

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The elasto-viscoplastodynamics of single-crystalline silicon in response to femtosecond laser pulsing at elevated temperature is studied. Hyperbolic energy transport dynamics is considered in conjunction with the Haasen-Sumino constitutive law to explore the thermo-elasto-visco-plastic response of the silicon material subjected to ultrafast optical heating. A computational scheme with staggered-grids is developed to time-integrate the coupled thermal-mechanical responses of silicon wafer at annealing temperatures up to 1,100 K. Non-thermal melting fluence threshold is examined favorably against published physical data. The elasto-viscoplastic response at high annealing temperature is characterized by thermal stress waves that propagate with increased oscillation amplitude and modified frequency spectrum. It is shown that the induced transverse and longitudinal displacements along with the normal stress components all establish well-defined relations with temperatures, suggesting that they may be utilized for the thermometric profiling of silicon wafers undergoing Rapid Thermal Processing (RTP) with desired thermal resolution.

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Section: Variation Of Lattice Temperaturecontrasting

confidence: 60%

Section: Variation Of Lattice Temperaturementioning

confidence: 76%

Section: Introductionmentioning

confidence: 99%

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Elasto-Viscoplastic Response of Silicon to Femtosecond Laser Heating at Elevated Temperature

Suh

2011

Journal of Thermal Stresses

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“…The initiation of ultrasonic plate guided waves by shortpulse heating using lasers is an optoacoustical process in which stresses are generated via deformation potentials [2,3]. Although the optical energy deposited into a focused point on the object being interrogated is small, the time duration of the pulse however is normally in nanoseconds or sub-nanoseconds.…”

Section: Introductionmentioning

confidence: 99%

Laser Induced Stress Wave Thermometry for In-Situ Temperature and Thickness Characterization of Single Crystalline Silicon Wafer Part II – Experimental Results

2010

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TAP-NDE is employed to perform an experimental study on silicon wafers of different thicknesses to determine the maximum possible resolution of TAP-NDE towards temperature sensitivity, and to demonstrate the ability to differentiate between wafers of different deposition layer thickness at temperatures up to 600°C. Temperature resolution is demonstrated for ±10°C resolution and for ±5°C resolution; while thickness differentiation is carried out with wafers carrying 4,000Å and 8,000Å of aluminum deposition layer. The experimental group velocities of a set of selected frequency components extracted using the Gabor wavelet time-frequency analysis compare favorably to their corresponding theoretical group velocities. It is shown that TAP-NDE is a feasible tool for identifying and characterizing thickness and temperature changes simultaneously during thermal annealing that can replace the current need for separate characterization of these two important parameters in semiconductor fabrication.

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Generalized thermo-elastodynamics for semiconductor material subject to ultrafast laser heating. Part I: Model description and validation

Suh

2010

International Journal of Heat and Mass Transfer

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Ultrafast Laser-Induced Elastodynamics in Single Crystalline Silicon Part II: Near-Field Response

Cited by 9 publications

References 8 publications

Elasto-Viscoplastic Response of Silicon to Femtosecond Laser Heating at Elevated Temperature

Elasto-Viscoplastic Response of Silicon to Femtosecond Laser Heating at Elevated Temperature

Laser Induced Stress Wave Thermometry for In-Situ Temperature and Thickness Characterization of Single Crystalline Silicon Wafer Part II – Experimental Results

Generalized thermo-elastodynamics for semiconductor material subject to ultrafast laser heating. Part I: Model description and validation

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