Ultrafast localized exciton dynamics in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Zn</mml:mi></mml:mrow><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Cd</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mi>−</mml:mi><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mi mathvariant="normal">Se</mml:mi><mml:mo>−</mml:mo><mml:mi mathvariant=

Netti, M.C.; Gadaleta, C.; Fatti, Natalia Del; Vallée, Fabrice; Tommasi, R.

doi:10.1103/physrevb.61.15637

Cited by 2 publications

(1 citation statement)

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“…The PL peak energy of sample B of thickness 20 nm is close to that of the epilayer and this may be due to the large effective masses of electrons and holes in this structure. 14) The PL profile of sample A is similar to that studied by Netti et al 15) We have obtained the TRPL of all the three samples at 40 K and for clarity only that of sample B is shown in Fig. 1.…”

Section: Resultssupporting

confidence: 64%

Carrier Relaxation of ZnCdSe/ZnSe Quantum Wells

Jang

Lee

Chung

et al. 2008

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The energy relaxations of Zn 0:91 Cd 0:09 Se multiquantum wells and epilayer structures were studied with an ultrafast timeresolved photoluminescence apparatus. The increase in the rise time of photoluminescence with decreasing photon energy and the redshift of the peak energy of time-resolved photoluminescence spectra with the delay time are attributed to the bandfilling effect and energy relaxation of hot carriers. The derived carrier temperature decreases rapidly within the first 10 ps after photoexcitation and at a much slower rate thereafter. The fast carrier cooling can be explained by the longitudinal optical (LO) phonon emissions by carriers through the Fröhlich interaction. The obtained effective scattering times of carrier and LO phonons are comparable to the theoretical prediction of 20 fs for multi-quantum well (MQW) of 20 nm well thickness and the epilayer. The slow carrier capture process may account for the long effective scattering time of 35 fs for the MQWs of 5 nm well thickness.

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Section: Resultssupporting

confidence: 64%