Ultrafast Optical Response of InAlAs/InAs/InGaAs Pseudomorphic High Electron Mobility Transistors

Abstract

High-electron-mobility transistors with a pseudomorphically strained InAs channel (InAs-PHEMTs) have excellent electron transport properties and a high electron density, which are due to their large conduction band discontinuity. In this work, we show the dependence of optical response on drain-to-source voltage (V DS) for InAs-PHEMTs and clarify the physical mechanism for the response time. The experimental results can be explained successfully using two different lifetimes, one dominated by the time required for a hole to transit from the channel to the source region under the channel field and the other dominated by Auger recombination. To numerically understand the optical response, we estimate minority carrier lifetime using the Auger recombination theory. The theoretical result agrees well with the experimental result.

Dc and Rf Characteristics Fluctuation of Inalas/Ingaas Hemts According to the Operating Temperature Variation

“…We have been studying the physical properties of a phenomenon expressed in high electron mobility transistors (HEMTs) of the kind used in ultra-highspeed field effect transistors (FETs) [3][4][5]. Our previous research on inhibitors of carrier transport led us to propose fusing a high-speed device with a photo-responsive device [6].…”

Characteristics of PHEMTs and MSM photodetectors simultaneously fabricated on same epitaxial wafer with In0.75Ga0.25As/InGaAs channel layer

“…Furthermore, we have shown that InAlAs/InGaAs HEMTs have a high responsivity when they are used as optical receivers [5]. Recently, we have demonstrated that InAs-PHEMTs can operate as not only high-speed transistors but as ultra-high speed optical receivers [3][4][5][6].…”