Ultrafast phase change speed and high thermal stability of scandium doped SnSb4 thin film for PCRAM applications

Liu, Ruirui; Li, A. F.; Xu, Zhehao; Yuan, Yukang; Xu, Jiayue; Zhai, Jiwei; Song, Sannian; Zhang, Song; Zhou, Xiao; Zhang, Hongrui; Song, Jun

doi:10.1016/j.jnoncrysol.2023.122395

Cited by 4 publications

(1 citation statement)

References 29 publications

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“…As the temperature continues to rise, there is a sharp decrease in resistance, indicating a phase transition from amorphous to crystalline states within the thin film. The temperature at which the resistance decreases most rapidly is known as the crystallization temperature, T c [14]. Notably, GS/GST undergoes two distinct phase transitions as temperature increases.…”

Section: Resultsmentioning

confidence: 99%

Multilayer Ge₈Sb₉₂/Ge₂Sb₂Te₅ thin films: unveiling distinct resistance states and enhanced performance for phase change random access memory

Liu,

Li,

Chen

et al. 2024

J. Phys. D: Appl. Phys.

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This study delves into the phase-change properties of the multilayer [Ge8Sb92(25 nm)-Ge2Sb2Te5(25 nm)]1, unveiling three distinct resistance states. These states arise from two structural transitions: initial Sb precipitation and Ge2Sb2Te5-FCC crystallization, succeeded by the transformation of Ge2Sb2Te5-FCC to Ge2Sb2Te5-HEX with additional Sb precipitation. The [Ge8Sb92(25 nm)-Ge2Sb2Te5(25 nm)]1-based PCRAM device showcases reversible switching characteristics and multi-level storage capabilities within a mere 20 ns, indicating enhanced phase-change speed and storage density. Furthermore, [Ge8Sb92(25 nm)-Ge2Sb2Te5(25 nm)]1 exhibits superior thermal stability and more steadfast data retention compared to conventional Ge2Sb2Te5. These findings offer crucial insights for advancing high-performance PCRAM devices.

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Section: Resultsmentioning

confidence: 99%

Multilayer Ge₈Sb₉₂/Ge₂Sb₂Te₅ thin films: unveiling distinct resistance states and enhanced performance for phase change random access memory

Liu,

Li,

Chen

et al. 2024

J. Phys. D: Appl. Phys.

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Nonvolatile Memristive Materials and Physical Modeling for In‐Memory and In‐Sensor Computing

Go,

Lim,

Lee

et al. 2024

Small Science

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Separate memory and processing units are utilized in conventional von Neumann computational architectures. However, regarding the energy and the time, it is costly to shuffle data between the memory and the processing entity, and for data‐intensive applications associated with artificial intelligence, the demand is ever increasing. A paradigm shift in traditional architectures is required, and in‐memory computing is one of the non‐von‐Neumann computing strategies. By harnessing physical signatures of the memory, computing workloads are administered in the same memory element. For in‐memory computing, a wide range of memristive material (MM) systems have been examined. Moreover, developing computing schemes that perform in the same sensory network and that minimize the data shuffle between the processing unit and the sensing element is a requirement, to process large volumes of data efficiently and decrease the energy consumption. In this review, an overview of the switching character and system signature harnessed in three archetypal MM systems is rendered, along with an integrated application survey for developing in‐sensor and in‐memory computing, viz., brain‐inspired or analogue computing, physical unclonable functions, and random number generators. The recent progress in theoretical studies that reveal the structural origin of the fast‐switching ability of the MM system is further summarized.

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Phase transition behavior and electrical properties of C/Sb2Te3 multilayer films on flexible polyimide substrates

Gao,

Pan,

Liu

et al. 2025

Journal of Alloys and Compounds

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Ultrafast phase change speed and high thermal stability of scandium doped SnSb4 thin film for PCRAM applications

Cited by 4 publications

References 29 publications

Multilayer Ge₈Sb₉₂/Ge₂Sb₂Te₅ thin films: unveiling distinct resistance states and enhanced performance for phase change random access memory

Multilayer Ge₈Sb₉₂/Ge₂Sb₂Te₅ thin films: unveiling distinct resistance states and enhanced performance for phase change random access memory

Nonvolatile Memristive Materials and Physical Modeling for In‐Memory and In‐Sensor Computing

Phase transition behavior and electrical properties of C/Sb2Te3 multilayer films on flexible polyimide substrates

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Ultrafast phase change speed and high thermal stability of scandium doped SnSb4 thin film for PCRAM applications

Cited by 4 publications

References 29 publications

Multilayer Ge8Sb92/Ge2Sb2Te5 thin films: unveiling distinct resistance states and enhanced performance for phase change random access memory

Multilayer Ge8Sb92/Ge2Sb2Te5 thin films: unveiling distinct resistance states and enhanced performance for phase change random access memory

Nonvolatile Memristive Materials and Physical Modeling for In‐Memory and In‐Sensor Computing

Phase transition behavior and electrical properties of C/Sb2Te3 multilayer films on flexible polyimide substrates

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Product

Resources

About

Multilayer Ge₈Sb₉₂/Ge₂Sb₂Te₅ thin films: unveiling distinct resistance states and enhanced performance for phase change random access memory

Multilayer Ge₈Sb₉₂/Ge₂Sb₂Te₅ thin films: unveiling distinct resistance states and enhanced performance for phase change random access memory