Ultrafast Photoinduced Multimode Antiferromagnetic Spin Dynamics in Exchange‐Coupled Fe/RFeO<sub>3</sub> (R = Er or Dy) Heterostructures

Tang, Jin; Ke, Ya-Jiao; He, Wei; Zhang, Xiang-Qun; Zhang, Wei; Li, Na; Zhang, Yongsheng; Li, Yan; Cheng, Zhao‐Hua

doi:10.1002/adma.201706439

Cited by 43 publications

(31 citation statements)

References 36 publications

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“…AFM materials, however, have also some unique advantages, such as the absence of stray fields, the relative insensitivity to external magnetic fields, and the possibility to operate at very high frequency (typically in the terahertz regime) with little power losses. Not many AFM spintronic devices have been realized so far, and research in this area is now attracting significant attention [ 4 , 5 ]. The challenge is to manipulate the direction of the spins (their quantization axis ) and detect a change of resistivity.…”

Section: Introductionmentioning

confidence: 99%

Magnetic Moments and Electron Transport through Chromium-Based Antiferromagnetic Nanojunctions

et al. 2018

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We report the electronic, magnetic and transport properties of a prototypical antiferromagnetic (AFM) spintronic device. We chose Cr as the active layer because it is the only room-temperature AFM elemental metal. We sandwiched Cr between two non-magnetic metals (Pt or Au) with large spin-orbit coupling. We also inserted a buffer layer of insulating MgO to mimic the structure and finite resistivity of a real device. We found that, while spin-orbit has a negligible effect on the current flowing through the device, the MgO layer plays a crucial role. Its effect is to decouple the Cr magnetic moment from Pt (or Au) and to develop an overall spin magnetization. We have also calculated the spin-polarized ballistic conductance of the device within the Büttiker–Landauer framework, and we have found that for small applied bias our Pt/Cr/MgO/Pt device presents a spin polarization of the current amounting to ≃25%.

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Section: Introductionmentioning

confidence: 99%

Magnetic Moments and Electron Transport through Chromium-Based Antiferromagnetic Nanojunctions

et al. 2018

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“…Because it contains all the key interactions that allow to describe most of the important magnetic properties of RM O 3 compounds, the model can be used to study dynamically magnetic domain walls. Going beyond, the model can be coupled with a lattice model (second principles [44,45]) to have access to a full atom plus spin dynamics for the simulations of, e.g., recent ultrafast laser excitation experiments made on these crystals [46][47][48].…”

Section: Discussionmentioning

confidence: 99%

Magnetic phase diagram of rare-earth orthorhombic perovskite oxides

Sasani,

Iñiguez,

Bousquet

2021

Preprint

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Spin reorientation and magnetisation reversal are two important features of the rare-earth orthorhombic provskites (RM O3's) that have attracted a lot of attention, though their exact microscopic origin has eluded researchers. Here, using density functional theory and classical atomistic spin dynamics we build a general Heisenberg magnetic model that allows to explore the whole phase diagram of the chromite and ferrite compounds and to scrutinize the microscopic mechanism responsible for spin reorientations and magnetisation reversals. We show that the occurrence of a magnetization reversal transition depends on the relative strength and sign of two interactions between rare-earth and transition-metal atoms: superexchange and Dzyaloshinsky-Moriya. We also conclude that the presence of a smooth spin reorientation transition between the so-called Γ4 and the Γ2 phases through a coexisting region, and the temperature range in which it occurs, depends on subtle balance of metal-metal (superexchange and Dzyaloshinsky-Moriya) and metal-rare-earth (Dzyaloshinsky-Moriya) couplings. In particular, we show that the intermediate coexistence region occurs because the spin sublattices rotate at different rates.

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“…Motivated by the above works and other relevant studies, antiferromagnetic spintronics has begun to take shape and there are a surge of theoretical and experimental studies in this field in recent years . Moreover, Nature Physics published a collection of reviews and commentaries focusing specifically on antiferromagnetic spintronics in March 2018 and highlighted them with an editorial article entitled “Upping the Anti,” which emphasizes that antiferromagnetic spintronics can create exotic forms of magnetism into practical applications.…”

Section: Some Important Steps In Antiferromagnetic Spintronicsmentioning

confidence: 99%

Antiferromagnetic Piezospintronics

Liu

Feng

Yan

et al. 2019

Adv Elect Materials

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antiferromagnet involves the antiferromagnetic exchange field H E as well due to spin canting via ω AFM ≈ ≈ 2 E A SF r H H rH , where r is the gyromagnetic ratio of an electron. It can be three orders of magnitude higher than that of ferromagnets ω FM ≈ rH A (typically GHz) and reaches THz. For example, the study on the laser-induced spin reorientation in antiferromagnetic TmFeO 3 in 2004 shows that the antiferromagnetic spins can be manipulated on a timescale of a few picoseconds. [1] In 2006, Núñes et al. proposed a pioneering theory that spin transfer torques can induce the order parameter orientation switching in antiferromagnetic metals, which is well similar to the ferromagnetic case. [2] However, they pointed out that compared with the ferromagnetic case, the critical current for antiferromagnetic order parameter switching can be smaller because of the absence of shape anisotropy and also because spin torques can act through the entire volume of an antiferromagnet. On the other hand, as the magnetic order in an antiferromagnet is staggered, only correspondingly staggered torques can drive coherent order parameter switching. Soon in 2007, different experimental groups demonstrated that the exchange bias of a ferromagnet/antiferromagnet bilayer system can be altered by a current and thus provided indirect evidences for current-induced torques in antiferromagnetic metals. [3][4][5] Subsequently, Gomonaȋand Loktev proposed the phenomenological model that describes the spin transfer torques in antiferromagnets. [6,7] These early studies were summarized by MacDonald and Tsoi in the review paper that emphasizes the concept of antiferromagnetic metal spintronics [8] and also by Gomonay and Loktev in the review paper that emphasizes spintronics of antiferromagnetic systems from a theoretical point of view. [9] In 2011, Park et al. creatively reversed the stacking order of the antiferromagnetic layer IrMn and the ferromagnetic layer NiFe in a spin-valve-like tunnel junction structure, where the antiferromagnetic IrMn served as the key functional layer for generating tunnel anisotropic magnetoresistance, while the ferromagnetic NiFe layer was utilized to rotate the antiferromagnetic spin axis of IrMn via the interfacial exchange spring effect. [10] Surprisingly, a more than 100% tunneling anisotropic magnetoresistance was achieved at 4 K. This device proves that antiferromagnetic materials could work as pivotal components in spintronic devices instead of simply serving as pinning Antiferromagnets naturally exhibit three obvious advantages over ferromagnets for memory device applications: insensitivity to external magnetic fields, much faster spin dynamics (≈THz), and higher packing density due to the absence of any stray field. Recently, antiferromagnetic spintronics has emerged as a cutting-edge field in the magnetism community.The key mission of this rapidly rising field is to steer the spins or spin axes of antiferromagnets via external stimuli and then realize advanced devices based on their physical property cha...

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Ultrafast Photoinduced Multimode Antiferromagnetic Spin Dynamics in Exchange‐Coupled Fe/RFeO₃ (R = Er or Dy) Heterostructures

Cited by 43 publications

References 36 publications

Magnetic Moments and Electron Transport through Chromium-Based Antiferromagnetic Nanojunctions

Magnetic Moments and Electron Transport through Chromium-Based Antiferromagnetic Nanojunctions

Magnetic phase diagram of rare-earth orthorhombic perovskite oxides

Antiferromagnetic Piezospintronics

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Ultrafast Photoinduced Multimode Antiferromagnetic Spin Dynamics in Exchange‐Coupled Fe/RFeO3 (R = Er or Dy) Heterostructures

Cited by 43 publications

References 36 publications

Magnetic Moments and Electron Transport through Chromium-Based Antiferromagnetic Nanojunctions

Magnetic Moments and Electron Transport through Chromium-Based Antiferromagnetic Nanojunctions

Magnetic phase diagram of rare-earth orthorhombic perovskite oxides

Antiferromagnetic Piezospintronics

Contact Info

Product

Resources

About

Ultrafast Photoinduced Multimode Antiferromagnetic Spin Dynamics in Exchange‐Coupled Fe/RFeO₃ (R = Er or Dy) Heterostructures