Ultrafast photoluminescence from (C6H5C2H4NH3)2PbI4

Fujita, Toshiaki; Nakashima, Hisashi; Hirasawa, Masahiro; Ishihara, Teruya

doi:10.1016/s0022-2313(99)00437-8

Cited by 22 publications

(22 citation statements)

References 4 publications

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“…The PL decay time of around 10 ps reported in Ref. [1] corresponds to l c < 20 nm which is classified in our model as the strong disorder limit.…”

mentioning

confidence: 67%

“…1), showing no influence of the radiative rate G (see the upper curve). This explains the surprising experimental result that the corrugation of a PEPI slab which should increase G, does not lead to faster decay in PL [1]. The PL decay time of around 10 ps reported in Ref.…”

mentioning

confidence: 70%

“…One way to increase the exciton radiative decay rate G is to utilize an optically active material with strong exciton-photon interaction, such as semiconductor-insulator superlattices [1]. Although the exciton radiative recombination has been intensively studied in literature (see, e.g., Ref.…”

mentioning

confidence: 99%

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Ultrafast spontaneous emission: Exciton radiative decay vs phonon scattering and disorder

Muljarov¹,

Ishihara²,

Tikhodeev³

2003

phys. stat. sol. (c)

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A theory of the exciton spontaneous emission from a semiconductor slab with strong exciton-photon interaction is developed. The limit of the radiative decay rate G large compared to the exciton-phonon scattering rate g is studied for the first time. It is shown that simultaneous account for the structural disorder and exciton-acoustic phonon scattering results in a two-exponential photoluminescence decay under off-resonant pulse excitation. In a well-organized structure (weak disorder), the fast component determined by G can lead to ultrafast photoluminescence decay with the lifetime of tens of fs. In a strongly disordered structure the decay turns out to be one-exponential and independent of G, in accordance with recent experimental results.The possibility of ultrafast radiative recombination of excitons in semiconductor structures has attracted much attention in recent years due to its crucial role for high-performance optoelectronic applications. One way to increase the exciton radiative decay rate G is to utilize an optically active material with strong exciton-photon interaction, such as semiconductor-insulator superlattices [1]. Although the exciton radiative recombination has been intensively studied in literature (see, e.g., Ref.[2] and references therein), only the situation of G ( g (g is the exciton-phonon scattering rate), which is typical for III-V semiconductors, has been considered.In the present work we examine the opposite case of G ) g typical for materials with strong exciton-photon coupling. Although the main results of our study are quite general for such kind of systems, concrete calculations are made for a homogeneous slab of (phenethylammonium) 2 PbI 4 (PEPI) in vacuum, with the following model parameters [3]: longitudinal-transverse splitting hD LT ¼ 40 meV, exciton transverse energy hw ex ¼ 2:4 eV, high-frequency background dielectric constant e b ¼ 4, and the exciton dephasing time g À1 ¼ 0:2 ps [4]. To describe the photoluminescence (PL) kinetics under the off-resonant pulse excitation of a semiconductor slab, we apply the adiabatic approach to the full exciton-photon-phonon Hamiltonian H H ¼Ĥ H exÀphot þĤ H exÀdisorder þĤ H exÀphon , at first treating quantum-mechanically the exciton-light interactionĤ H exÀphot and structural disorder potential [5]Ĥ H exÀdisorder and then accounting statistically for the exciton-phonon scattering and dephasing due toĤ H exÀphon , since the latter take place on a much larger time scale than the radiative decay time of an individual exciton G À1 . At the same time we assume that due to the optical-phonon-assisted processes hot excitons are quickly dropped (quicker than G À1 ) to the exciton resonance energy where they can be scattered afterwards by acoustic phonons within a small energy window around hw ex . Even though excitons are strongly coupled to the bulk photon

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“…The PL decay time of around 10 ps reported in Ref. [1] corresponds to l c < 20 nm which is classified in our model as the strong disorder limit.…”

mentioning

confidence: 67%

mentioning

confidence: 70%

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Ultrafast spontaneous emission: Exciton radiative decay vs phonon scattering and disorder

Muljarov¹,

Ishihara²,

Tikhodeev³

2003

phys. stat. sol. (c)

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“…Under special circumstances, based on organic moiety conformation, the metal halides may selfassemble into either edge sharing or face sharing of metal halide octahedra, forming various low dimensional inorganic halide networks of different orientations. Based on such different networks, these hybrids show marked variation in their structural and optical features [50][51][52][53][54][55][56][57][58][59].…”

Section: Naturally Self-assembled Inorganic-organic (Io) Hybrid Systementioning

confidence: 99%

“…Apart from linear optical studies, high-optical excitation effects such as ultrafast dynamics of excitons [50,72], observation of higher-order excitons (biexciton and triexciton) [51,52,[73][74][75], and even an attempt of biexciton lasing [76] were also reported. Photonic devices such as thin film transistors (TFTs), inorganic-organic fieldeffect transistors (IOFETs), inorganic-organic light emitting diodes (IOLEDs), and scintillators were also been successfully demonstrated [77][78][79].…”

Section: Naturally Self-assembled Inorganic-organic (Io) Hybrid Systementioning

confidence: 99%

Naturally Self-Assembled Nanosystems and Their Templated Structures for Photonic Applications

Kannan

Kotla

Ahmad

et al. 2013

Journal of Nanoparticles

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Self-assembly has the advantage of fabricating structures of complex functionalities, from molecular levels to as big as macroscopic levels. Natural self-assembly involves self-aggregation of one or more materials (organic and/or inorganic) into desired structures while templated self-assembly involves interstitial space filling of diverse nature entities into self-assembled ordered/disordered templates (both from molecular to macro levels). These artificial and engineered new-generation materials offer many advantages over their individual counterparts. This paper reviews and explores the advantages of such naturally self-assembled hybrid molecular level systems and template-assisted macro-/microstructures targeting simple and low-cost device-oriented fabrication techniques, structural flexibility, and a wide range of photonic applications.

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