Ultrafast Pump-Probe Reflectivity Study of Carrier Dynamics in Silicon Surface

Guodong, 刘国栋 Liu; Guibing, 王贵兵 Wang; Bo, 付博 Fu; Jijun, 江继军 Jiang; Weiping, 王伟平 Wang; Fu, 罗福 Luo

doi:10.3788/cjl20083509.1365

中国激光

2008

DOI: 10.3788/cjl20083509.1365

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Ultrafast Pump-Probe Reflectivity Study of Carrier Dynamics in Silicon Surface

刘国栋 Liu Guodong¹,

王贵兵 Wang Guibing²,

付博 Fu Bo³

et al.

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Ultrafast dynamics of MnSi1.7 film studied by pump–probe technique

Han

Hou

et al. 2016

Mod. Phys. Lett. B

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Manganese silicide (MnSi[Formula: see text]) semiconductor thin films with a thickness of 80 nm are prepared by magnetron sputtering deposition technology. The reflectivity change of thin film samples is studied by femtosecond (fs) pump–probe technique under different pump pulse energies and the laser pulse width is 120 fs. The results show that the transient reflectivity increases within a time-scale of about 100 fs. Then, a fast decay of reflectivity occurs in 0.6 picosecond (ps), and it is mainly due to the carrier–carrier scattering. Next, a slower decay of the reflectivity on a time-scale of dozens of ps is detected, and the Auger recombination and diffusion are the main processes. The effective mass of electron and hole in MnSi[Formula: see text] film are calculated by using the pseudo-potential plane wave method on first-principles methods. The effective mass of electron is 0.25[Formula: see text] ([Formula: see text] is the electron mass), while 0.13[Formula: see text] for hole. Experimental results are explained with the results of theoretical simulation.

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Ultrafast dynamics of MnSi1.7 film studied by pump–probe technique

Han

Hou

et al. 2016

Mod. Phys. Lett. B

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show abstract

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Ultrafast Pump-Probe Reflectivity Study of Carrier Dynamics in Silicon Surface

Cited by 1 publication

References 0 publications

Ultrafast dynamics of MnSi1.7 film studied by pump–probe technique

Ultrafast dynamics of MnSi1.7 film studied by pump–probe technique

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