Chloride
perovskites are promising semiconductor materials for
creating optoelectronic devices in the near-ultraviolet range. The
study of defect-related states is essential for future improvements
in device performance. This article presents an investigation of the
photoluminescence, photoluminescence excitation, and reflectivity
of MAPbCl3 (MA+ = CH3NH 3
+) halide perovskite
single crystals at the low-temperature orthorhombic phase in the T = 4–174 K temperature range. The position of the
free exciton was determined, and defect-related states, which appeared
as equally polarized narrow emission lines up to 100 K, were analyzed
in detail. The assumption that these states were phonon replicas was
ruled out using photoluminescence excitation spectroscopy, and it
was concluded that these narrow lines correspond to the emission of
actual defect-related states that absorb light. This study provides
new insights into the nature of defect-related states in perovskite
single crystals, which could have important implications for the development
of more efficient optoelectronic devices.