Ultrafast real-time tracing of surface electric field generated via hot electron transport in polar semiconductors

Choi, In Hyeok; Kim, Min-Seop; Kang, Chul; Lee, Jong Seok

doi:10.1016/j.apsusc.2021.151279

Cited by 4 publications

(3 citation statements)

References 28 publications

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“…These electrons quickly recombine and lose energy. The generated energy is then transferred to the crystal lattice and leads to heating [14]. Down-shifting luminescent materials absorb high-energy photons and emit low-energy photons [15].…”

Section: Introductionmentioning

confidence: 99%

Investigation of n-ZnO/p-Si and n-TiO₂/p-Si Heterojunction Solar Cells: TCAD + DFT

et al. 2023

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This paper focuses on exploring new materials and structure as a means to increase the efficiency of solar cells. Since silicon is widespread on earth, it is desirable to study heterojunction solar cells made mainly of silicon and new materials. Therefore, ZnO/Si and TiO2/Si heterojunction solar cells were studied in this paper. First, the electrical and optical properties of ZnO and TiO2 were determined using the Perdew-Burke-Ernzerhof (PBE), PBE functional revised for solids (PBESol) and Perdew-Wang (PW91) functionals of the Generalized gradient approximation (GGA) in Density Functional Theory (DFT). The obtained results in various functionals are assessed and analyzed. It was found that geometric optimized structures of TiO2 and ZnO is mechanical stable. Accordingly, in all functionals, the effective mass of the electron in ZnO and TiO2 proved to be smaller than that of the hole. The mobility of electrons and holes in ZnO was calculated to be 430.72 cm 2 V -1 s -1 and 5.25 cm 2 V -1 s -1 respectively. In TiO2, it was 355.27 cm 2 V -1 s -1 and 46.38 cm 2 V -1 s -1 . When PW91, PBESol, PBE functionals were used, the dielectric constant was determined to be 11, 11.5, 8.5 for ZnO and 9.5, 10, 9 for TiO2, respectively. According to the DFT results, it was determined that ZnO and TiO2 are transparent and mainly n-type direct semiconductors. According to device simulation, the maximum short-circuit current of ZnO/Si and TiO2/Si heterojunction solar cells is 18 mA/cm 2 at a thickness of 80 nm and 15.3 mA/cm 2 at a thickness of 40 nm. Finally, the average fill factor of ZnO/Si and TiO2/Si solar cells was 0.73 and 0.76 respectively. So TiO2 can be used as a transparent contact and ZnO as an emitter layer in a silicon-based solar cell.

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Section: Introductionmentioning

confidence: 99%

Investigation of n-ZnO/p-Si and n-TiO₂/p-Si Heterojunction Solar Cells: TCAD + DFT

et al. 2023

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“…As a consequence, they are highly sensitive to the symmetry of the system. SHG has been largely used as a probe to investigate the properties of bulk, surfaces, interfaces and complex systems [3][4][5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%

“…Recently, it was also reported that ultrafast recombination together with carrier diffusion can be monitored by EFISH generated by space charge accumulation in the material. [4,17,18].…”

Section: Introductionmentioning

confidence: 99%

Ab initio nonlinear optics in solids: linear electro-optic effect and electric-field induced second-harmonic generation

Prussel

Maji

Degoli

et al. 2022

Eur. Phys. J. Spec. Top.

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HAL is a multi-disciplinary open access archive for the deposit and dissemination of scientific research documents, whether they are published or not. The documents may come from teaching and research institutions in France or abroad, or from public or private research centers. L'archive ouverte pluridisciplinaire HAL, est destinée au dépôt et à la diffusion de documents scientifiques de niveau recherche, publiés ou non, émanant des établissements d'enseignement et de recherche français ou étrangers, des laboratoires publics ou privés.

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Mixed cation ordering scaffold polar 2D halide perovskite semiconductor for self-powered polarization-sensitive photodetection

Wang,

Li,

Zhang

et al. 2024

Chinese Chemical Letters

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Ultrafast real-time tracing of surface electric field generated via hot electron transport in polar semiconductors

Cited by 4 publications

References 28 publications

Investigation of n-ZnO/p-Si and n-TiO₂/p-Si Heterojunction Solar Cells: TCAD + DFT

Investigation of n-ZnO/p-Si and n-TiO₂/p-Si Heterojunction Solar Cells: TCAD + DFT

Ab initio nonlinear optics in solids: linear electro-optic effect and electric-field induced second-harmonic generation

Mixed cation ordering scaffold polar 2D halide perovskite semiconductor for self-powered polarization-sensitive photodetection

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Ultrafast real-time tracing of surface electric field generated via hot electron transport in polar semiconductors

Cited by 4 publications

References 28 publications

Investigation of n-ZnO/p-Si and n-TiO2/p-Si Heterojunction Solar Cells: TCAD + DFT

Investigation of n-ZnO/p-Si and n-TiO2/p-Si Heterojunction Solar Cells: TCAD + DFT

Ab initio nonlinear optics in solids: linear electro-optic effect and electric-field induced second-harmonic generation

Mixed cation ordering scaffold polar 2D halide perovskite semiconductor for self-powered polarization-sensitive photodetection

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Product

Resources

About

Investigation of n-ZnO/p-Si and n-TiO₂/p-Si Heterojunction Solar Cells: TCAD + DFT

Investigation of n-ZnO/p-Si and n-TiO₂/p-Si Heterojunction Solar Cells: TCAD + DFT