Ultrafast Response p‐Si/n‐ZnO Heterojunction Ultraviolet Detector Based on Pyro‐Phototronic Effect

Abstract

A light-self-induced pyro-phototronic effect in wurtzite ZnO nanowires is proposed as an effective approach to achieve ultrafast response ultraviolet sensing in p-Si/n-ZnO heterostructures. The relatively long response/recovery time of zinc-oxide-based ultraviolet sensors in air/vacuum has long been an obstacle to developing such detectors for practical applications. The response/recovery time and photoresponsivity are greatly improved by the pyro-phototronic effect.

Ultrabroadband, Large Sensitivity Position Sensitivity Detector Based on a Bi2Te2.7Se0.3/Si Heterojunction and Its Performance Improvement by Pyro‐Phototronic Effect

“…However, for traditional photodetectors, the pyro-phototronic effect usually improves both the rise and the fall times, [62][63][64][65][66] which is inconsistent with our results. However, for traditional photodetectors, the pyro-phototronic effect usually improves both the rise and the fall times, [62][63][64][65][66] which is inconsistent with our results.…”

“…Therefore, these carriers are more easily swept away by the enhanced field and quickly transmitted into the Bi 2 Te 2.7 Se 0.3 and the Si layers. [62][63][64][65][66] Firstly, the LPV-t curves were identified under different power illuminations of a 532 nm laser at 1000 Hz with laser beam staying at x = 0.36 mm, as shown in Figure 6b. [59,60] www.advelectronicmat.de At last, the response speed, as another key parameter of a photodetector, [34,61] is also well studied in the Bi 2 Te 2.7 Se 0.3 / Si heterojunction.…”

“…When suddenly turning off the laser (Stage III), a temperature decrease is instantaneously happened, resulting in an opposite longitudinal pyroelectric potential (as compared with stage I), as shown in Figure 7d. [62][63][64][65][66] Moreover, it is suggested that a faithful PSD should exhibit a wide bandwidth to make it collect a reliable optical signal over the entire bandwidth and the response speed obtained at high pulse frequencies may be more accuracy due to the longer time taken on the laser on stage at low frequencies. At last, the temperature returns back and keeps constant as room temperature (Stage VI), so that the pyroelectric potential is disappeared, and the LPV still keeps at zero in this stage (Figure 7e).…”

Enhanced Performance of a Self‐Powered Organic/Inorganic Photodetector by Pyro‐Phototronic and Piezo‐Phototronic Effects

“…[27][28][29] Additionally, wurtzite structured ZnO has piezoelectric effect due to its noncentral-symmetric crystal structure. [34][35][36] As pyroelectric and piezoelectric effects are both based on the polarization charges generated in ZnO semiconductor material, it is expected that the pyro-phototronic and piezo-phototronic effects can be coupled for further improvement of ZnO-based UV PDs' performances. …”

“…Piezoelectric polarization charges can be produced by externally applied strains to modulate/tune the charge carriers' generation, separation, transportation, and recombination at the metal/ZnO interface through modifying the Schottky barrier properties, which are able to enhance the ZnO-based PDs' performances and known as the piezo-phototronic effect. [34][35][36] As pyroelectric and piezoelectric effects are both based on the polarization charges generated in ZnO semiconductor material, it is expected that the pyro-phototronic and piezo-phototronic effects can be coupled for further improvement of ZnO-based UV PDs' performances. [34][35][36] As pyroelectric and piezoelectric effects are both based on the polarization charges generated in ZnO semiconductor material, it is expected that the pyro-phototronic and piezo-phototronic effects can be coupled for further improvement of ZnO-based UV PDs' performances.…”