Ultrafast self-powered visible blind UV photodetectors based on MgZnO vertical Schottky junction in crossbar geometry

Das, Amit K.; Sahu, V.K.; Ajimsha, R.S.; Misra, P.

doi:10.1016/j.sna.2023.114612

Sensors and Actuators A: Physical

2023

DOI: 10.1016/j.sna.2023.114612

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Ultrafast self-powered visible blind UV photodetectors based on MgZnO vertical Schottky junction in crossbar geometry

Amit K. Das,

V.K. Sahu,

R.S. Ajimsha

et al.

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Cited by 7 publications

References 31 publications

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1D Core@Dual‐Shell Radial Heterojunction for Unipolar Barrier Solar‐Blind Avalanche Photodetector

Dong,

Wan,

Xia

et al. 2024

Adv Funct Materials

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Ga2O3 based solar‐blind avalanche photodetectors (APDs) are promising for week photodetection in both civil and military applications due to low‐voltage operation, compact dimensions, and optical filter‐free. However, the performance is impeded by low surface‐to‐volume ratio, low barrier height, and elevated dark current. Herein, a 1D ZnO/HfO2/Ga2O3 core@dual‐shell radial heterostructure is designed for high‐performance solar‐blind APDs. A single‐crystal ZnO microwire with smooth surface serves as core framework for shell growth with small lattice mismatch. By incorporating an HfO2 barrier layer, the conduction band offset is further increased to 2.15 eV without introducing a valence band barrier that would impede hole transport, forming a unipolar barrier structure. This high unipolar barrier suppresses dark current effectively, increases the avalanche breakdown electric field, and enhances the avalanche gain. The optimized APD achieves a responsivity of 2.2 × 105 A W−1 and a detectivity of 3.1 × 1016 Jones, with an avalanche gain of 4.7 × 104, which is 16 times higher than the HfO2‐free barrier layer‐modified device. Additionally, it exhibits long‐time stability with a response time of 6.4 ms and a solar‐blind/UVA rejection ratio of 6.25, ensuring immunity to solar interference. This work offers greater design flexibility to develop high‐performance Ga2O3‐based APDs and other optoelectronic devices.

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1D Core@Dual‐Shell Radial Heterojunction for Unipolar Barrier Solar‐Blind Avalanche Photodetector

Dong,

Wan,

Xia

et al. 2024

Adv Funct Materials

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Development of highly sensitive UV photodetector based on chevronic TiO2 thin film using simple oblique angle deposition technique

Khundrakpam,

Shougaijam,

Ranjan

2024

J Mater Sci: Mater Electron

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Enhancement-mode ZnGa2O4-based Phototransistor with high UV–visible rejection ratio grown by metalorganic chemical vapor deposition

Rana,

Tarntair,

Horng

et al. 2024

Journal of Alloys and Compounds

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Ultrafast self-powered visible blind UV photodetectors based on MgZnO vertical Schottky junction in crossbar geometry

Cited by 7 publications

References 31 publications

1D Core@Dual‐Shell Radial Heterojunction for Unipolar Barrier Solar‐Blind Avalanche Photodetector

1D Core@Dual‐Shell Radial Heterojunction for Unipolar Barrier Solar‐Blind Avalanche Photodetector

Development of highly sensitive UV photodetector based on chevronic TiO2 thin film using simple oblique angle deposition technique

Enhancement-mode ZnGa2O4-based Phototransistor with high UV–visible rejection ratio grown by metalorganic chemical vapor deposition

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