Ultrafast semiinsulating InP:Fe-InGaAs:Fe-InP:Fe MSM photodetectors: modeling and performance

Böttcher, E.H.; Kühl, D.; Hieronymi, F.; Dröge, E.; Wolf, Thomas; Bimberg, D.

doi:10.1109/3.159541

Cited by 70 publications

(16 citation statements)

References 46 publications

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“…The saturation bandwidth for the passivated devices is 10-11 GHz, and is obtained for bias voltage greater than 12V. This compares well to transit-time-limited estimates 12 for devices with similar geometry.…”

Section: Resultssupporting

confidence: 49%

Elimination of low frequency gain in InAlAs/InGaAs metal-semiconductor-metal photodetectors by silicon nitride passivation

DeCorby

MacDonald

Beaudoin

et al. 1997

Journal of Elec Materi

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We report the reduction of low frequency gain and surface recombination in InAlAs/InGaAs metal-semiconductor-metal (MSM) photodetectors, by surface passivation with plasma-enhanced chemical vapor deposition (PECVD) of silicon nitride. A corresponding improvement in device speed, measured in the frequency-domain, is demonstrated. Large (100 µm) 2 devices exhibit neartransit-time-limited bandwidth (>10 GHz) following passivation, and device characteristics have been stable over a period of several months. We propose a physical model for electron trapping at the free surface, to explain the low frequency gain in nonpassivated devices and its subsequent elimination.

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Section: Resultssupporting

confidence: 49%

Elimination of low frequency gain in InAlAs/InGaAs metal-semiconductor-metal photodetectors by silicon nitride passivation

DeCorby

MacDonald

Beaudoin

et al. 1997

Journal of Elec Materi

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“…9(a)-(i) shows equivalent circuits of the metal-semiconductor-metal (MSM) photodetector used in the simulation. A 50-fF capacitance was chosen for the photodetector [31]. When the input resistance of the transimpedance amplifier is high, the relative response at lower frequency band improves, but the frequency response degrades, as is shown in Fig.…”

Section: Key Components For Buildingmentioning

confidence: 98%

Wide-band millimeter-wave/optical-network applications in Japan

Imai

Kawamura²,

Inagaki³

et al. 1997

IEEE Trans. Microwave Theory Techn.

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This paper describes work on wide-band millimeterwave (MMW)/optical-network applications in Japan-in particular, projects being pursued at the Advanced Telecommunications Research Institute (ATR). Digital-signal transmission at 118 Mb/s was tested. Results of the experiments demonstrate that highspeed digital-signal transmission, with a total carrier-to-noise ratio (C/N) degradation of less than 1.2 dB from a modem at a BER of 10 06 , is feasible. Similarly, analog FM-signal transmission with a weighted S/N of more than 45 dB is also feasible at a signal bandwidth of 18 MHz and FM carrier frequency of 43.75 GHz. Based on these results, a demonstration system was constructed, and the feasibility of the system was confirmed. Several key technologies for system construction such as an MMW optical modulator and an MMW high-speed p-i-n detector and some related technologies are also described. In addition, an advanced system considered suitable for future high-speed mobile communications is proposed. This system employs an optical signal-processing multibeam antenna, where the direction of each sharp beam can be adaptively controlled.Index Terms-Beamforming network, millimeter wave, millimeter wave/optical interaction, millimeter-wave subcarrier system, mobile communication system, optical signal-processing antennas.

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“…The active layer depth should be on the order of the finger spacing so that carriers are never generated at a distance greater than the gap spacing 9 . The active layer of the experimental detectors is, from Fig.…”

Section: Diffusion-time Limited Detectors and Optical Diffraction Effmentioning

confidence: 99%

Nanoscale heterostructure InGaAs MSM photodetectors

2005

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In this work, we investigate the DC and high-frequency performance of heterostructure InGaAs/InAlAs metalsemiconductor-metal (MSM) photodetectors fabricated using e-beam nanolithography. The device finger electrodes are approximately 250 nm in width with gaps of 100 nm, and are arranged interdigitally in a circular geometry with ~4.5 µ m outer diameter. The InGaAs absorption layer is 200 nm thick. High-bandgap material layers are utilized to form carrier transport barriers and to enhance Schottky barrier heights at the contacts. Also, a buried Bragg reflector (resonant cavity enhanced structure) serves to increase the photodetector responsivity given the very thin absorption layer thickness. Current-voltage measurements of seven devices were taken at room temperature under dark and illuminated conditions. Additionally, the frequency performance was evaluated using a 1550-nm diode laser with an integrated 50-GHz electroabsorption modulator and a microwave network analyzer. A fairly large range of dark currents from 100 pA-1 µ A is observed. External responsivities for these small devices also vary widely between 0.05 -0.24 A/W. Under high-frequency intensity modulation, the devices exhibit an RC-limited and/or diffusion-limited performance, with usable bandwidths to 15 GHz. Physical origins of the device and parasitic capacitances are discussed as well as optical diffraction effects, both of which are thought to contribute to the limited high-frequency performance.

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Ultrafast semiinsulating InP:Fe-InGaAs:Fe-InP:Fe MSM photodetectors: modeling and performance

Cited by 70 publications

References 46 publications

Elimination of low frequency gain in InAlAs/InGaAs metal-semiconductor-metal photodetectors by silicon nitride passivation

Elimination of low frequency gain in InAlAs/InGaAs metal-semiconductor-metal photodetectors by silicon nitride passivation

Wide-band millimeter-wave/optical-network applications in Japan

Nanoscale heterostructure InGaAs MSM photodetectors

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