Ultrafast Speed, Dark Current Suppression, and Self-Powered Enhancement in TiO₂-Based Ultraviolet Photodetectors by Organic Layers and Ag Nanowires Regulation

Abstract

sı Supporting InformationThe Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acs.jpclett.1c03090.Experimental characterization and detailed performances of devices (PDF)

Low‐Power Photodetectors Based on PVA‐Modified Reduced Graphene Oxide Hybrid Solutions

“…Some generated carriers accumulate at the sides of electrodes and then offset the built‐in field; consequently, the built‐in field can't separate more carriers. [ 57 ]…”

“…Therefore, various photodetectors operated in a self-powered mode have been widely developed. [57][58][59][60] In the Ag/rGO/Si or Ag/PVA/rGO/Si structure, the formation of barrier height between rGO/Si interface enables the photodetector to work even under ultra-low bias. At the bias of 0 V, rGO (sample A), rGO:PVA = 1:0.2 g (sample B) and rGO:PVA = 1:0.5 g (sample C) exhibit an obvious photocurrent, suggesting these photodetectors possess the self-powered mode.…”

“…Some generated carriers accumulate at the sides of electrodes and then offset the built-in field; consequently, the built-in field can't separate more carriers. [57] The detectivity (D*) is an essential characteristic to evaluate the distinctiveness of photodetectors which is given by…”

“…Low energy consumption and self-powered property are of a significant trend for future portable devices. Therefore, various photodetectors operated in a self-powered mode have been widely developed [57][58][59][60]. In the Ag/rGO/Si or Ag/PVA/rGO/Si structure, the formation of barrier height between rGO/Si interface enables the photodetector to work even under ultra-low bias.…”

Boosting Self‐Powered Ultraviolet Photoresponse of TiO2‐Based Heterostructure by Flexo‐Phototronic Effects

“…However, improvement of built-in potential by these methods is usually insufficient to regulate the direction of charge pair transfer, resulting in insufficient ability to sense low UV intensity at high speed. [15,16] To overcome these obstacles, it is essential to involve a new methodology to separate the electron-hole pair along with the junction built-in potential towards the development of self-powered and robust optoelectronic device.Further, heterostructures are an essential component for advanced optoelectronic devices, since they serve in different applications, including in rectification diodes, transistors, and solar energy harvesting. [17][18][19][20] Therefore, it remains a fundamental quest to modulate/improve the behavior of heterostructures in the search for conceptually novel optoelectronic performances.…”