Ultrafast Terahertz Nanoseismology of GaInN/GaN Multiple Quantum Wells

Mannan, Abdul; Bagsican, Filchito Renee G.; Yamahara, Kota; Kawayama, Iwao; Murakami, Hironaru; Bremers, Heiko; Rossów, U.; Hangleiter, A.; Turchinovich, Dmitry; Tonouchi, Masayoshi

doi:10.1002/adom.202100258

Cited by 10 publications

(3 citation statements)

References 41 publications

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“…Moreover, the observed decay time of the 4th harmonic revealed a velocity exceeding 40 nm ps −1 . Furthermore, Mannan et al conducted a detailed investigation on the emission mechanism and propagation properties of acoustically generated THz phonons within a piezoelectric medium [144]. They specifically focused on the multiple quantum well (MQW) systems and explored the phenomenon of coherent acoustic phonon propagation.…”

Section: Thz Detectorsmentioning

confidence: 99%

Recent progress of group III–V materials-based nanostructures for photodetection

Cong,

Yin,

Zheng

et al. 2024

Nanotechnology

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Due to the suitable bandgap structure, efficient conversion rates of photon to electron, adjustable optical bandgap, high electron mobility/aspect ratio, low defects, and outstanding optical and electrical properties for device design, III-V semiconductors have shown excellent properties for optoelectronic applications, including photodiodes, photodetectors, solar cells, photocatalysis, etc. In particular, III-V nanostructures have attracted considerable interest as a promising photodetector platform, where high-performance photodetectors can be achieved based on the geometry-related light absorption and carrier transport properties of III-V materials. However, the detection range from Ultraviolet to Terahertz including broadband photodetectors of III-V semiconductors still have not been more broadly development despite significant efforts to obtain the high performance of III-V semiconductors. Therefore, the recent development of III-V photodetectors in a broad detection range from Ultraviolet to Terahertz, and future requirements are highly desired.In this review, the recent development of photodetectors based on III-V semiconductor with different detection range is discussed. First, the bandgap of III-V materials and synthesis methods of III-V nanostructures are explored, subsequently, the detection mechanism and key figures-of-merit for the photodetectors are introduced, and then the device performance and emerging applications of photodetectors are provided. Lastly, the challenges and future research directions of III-V materials for photodetectors are presented.

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Section: Thz Detectorsmentioning

confidence: 99%

Recent progress of group III–V materials-based nanostructures for photodetection

Cong,

Yin,

Zheng

et al. 2024

Nanotechnology

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show abstract

“…We have applied them to the SiC-MOS and obtained useful information [22]. In multiple quantum well structures GaInN/GaN, we can characterize carrier dynamics in the wells and capping layers [24].…”

Section: Various Devicesmentioning

confidence: 99%

“…We have applied TES and LTEM to Si-based materials and devices and proven that one can estimate various parameters, such as surface potential, work function, impurity doping density, defects density in passivation layers, surface state density, and so on, semi-quantitatively and non-contactly by just observing the THz radiation [8][9][10][11][12][13][14][15][16][17]. In the present work, we review the TES and LTEM application to wide bandgap semiconductors [18][19][20][21][22][23][24].…”

Section: Introductionmentioning

confidence: 99%

How to use terahertz emission spectroscopy for wide bandgap semiconductor evaluation

Tonouchi

2023

Terahertz Emitters, Receivers, and Applications XIV

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The time-domain waveforms of terahertz (THz) emission spectroscopy (TES) can tell us the ultrafast nature of the material photoresponse, and TES is becoming an essential tool to explore the advanced material functionalities and disclose the dynamics of the photocarriers. However, universal applications can not be reached without understanding physics in more detail over the broad dimensional range in the time-domain. We have applied TES and LTEM to Si-based materials and devices and proven that one can estimate various parameters, such as surface potential, work function, impurity doping density, defects density in passivation layers, surface state density, and so on, semi-quantitatively and non-contactly by just observing the THz radiation. In the present work, we review the TES application to wide bandgap semiconductors.

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Enhanced luminescence efficiency in Eu-doped GaN superlattice structures revealed by terahertz emission spectroscopy

Murakami,

Takeo,

Mitchell

et al. 2023

Commun Mater

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Eu-doped Gallium nitride (GaN) is a promising candidate for GaN-based red light-emitting diodes, which are needed for future micro-display technologies. Introducing a superlattice structure comprised of alternating undoped and Eu-doped GaN layers has been observed to lead to an order-of-magnitude increase in output power; however, the underlying mechanism remains unknown. Here, we explore the optical and electrical properties of these superlattice structures utilizing terahertz emission spectroscopy. We find that ~0.1% Eu doping reduces the bandgap of GaN by ~40 meV and increases the index of refraction by ~20%, which would result in potential barriers and carrier confinement within a superlattice structure. To confirm the presence of these potential barriers, we explored the temperature dependence of the terahertz emission, which was used to estimate the barrier potentials. The result revealed that even a dilutely doped superlattice structure induces significant confinement for carriers, enhancing carrier recombination within the Eu-doped regions. Such an enhancement would improve the external quantum efficiency in the Eu-doped devices. We argue that the benefits of the superlattice structure are not limited to Eu-doped GaN, which provides a roadmap for enhanced optoelectronic functionalities in all rare-earth-doped semiconductor systems.

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Ultrafast Terahertz Nanoseismology of GaInN/GaN Multiple Quantum Wells

Cited by 10 publications

References 41 publications

Recent progress of group III–V materials-based nanostructures for photodetection

Recent progress of group III–V materials-based nanostructures for photodetection

How to use terahertz emission spectroscopy for wide bandgap semiconductor evaluation

Enhanced luminescence efficiency in Eu-doped GaN superlattice structures revealed by terahertz emission spectroscopy

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