Ultrafast third-order optical nonlinearity in SnS 2 layered compound for photonic applications

Petriş, A.; Gheorghe, Petronela; Vlad, V. I.; Rusu, E.; Ursaki, V. V.; Tiginyanu, I. M.

doi:10.1016/j.optmat.2017.12.023

Cited by 10 publications

(5 citation statements)

References 33 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The camera calibration procedure and the image processing method, used in our THG experiments, were introduced by us. They are described in detail in and utilized by us in the investigation by THG of the ultrafast nonlinear response of SnS 2 and GaN. , …”

Section: Experimental Sectionmentioning

confidence: 99%

See 1 more Smart Citation

LGYSB:Nd─High-Performance Lasing in the Near-Infrared Region

Broasca,

Greculeasa,

Voicu

et al. 2024

J. Am. Chem. Soc.

Self Cite

View full text Add to dashboard Cite

La w Nd x Gd y Y z Sc 4−w−x−y−z (BO 3 ) 4 (LGYSB:Nd) crystals with different Y concentrations (z = 0.15, 0.05, and 0.025) have been grown by the Czochralski method for the first time. The LGYSB:Nd-type crystals exhibit an acentric structure similar to that of the natural mineral huntite CaMg 3 (CO 3 ) 4 , with space group R32. The composition of the LGYSB:Nd_3 (z = 0.025) crystal grown f r o m t h e s t a r t i n g m e l t c o m p o s i t i o n La 0.628 Gd 0.547 Y 0.025 Nd 0.05 Sc 2.75 (BO 3 ) 4 was measured by inductively coupled plasma mass spectrometry method, and it was found to be La 0.6794 Gd 0.4105 Y 0.0178 Nd 0.0381 Sc 2.8542 (BO 3 ) 4 . The transversal spatial distribution of the refractive index in the LGYSB:Nd_3 crystal was investigated. Third-order nonlinear optical susceptibility χ (3) of the LGYSB:Nd_3 crystal was determined from third-harmonic generation experiments with ultrashort (fs) laser pulses. The optical transmission spectrum was measured in the range of 200−2000 nm. The absorption cross-section at 808 nm in σ-polarization was determined to be 1.18 × 10 −19 cm 2 for the LGYSB:Nd_3 crystal. The 10K absorption spectra revealed that the Nd 3+ ions occupy only La 3+ cationic sites in the LGYSB host matrix. The emission cross-section at 1064 nm in σ-polarization was determined to be σ em (σ) = 1.74 × 10 −19 cm 2 for the LGYSB:Nd_3 crystal. The fluorescence lifetime was found to be τ = 115 μs for all of the LGYSB:Nd crystals. The LGYSB:Nd_3 laser was operated at an emission wavelength of 1062 nm with very high slope efficiencies of η sa = 0.74 and η sa = 0.64 in quasi-cw and cw regimes, respectively.

show abstract

Section: Experimental Sectionmentioning

confidence: 99%

“…They are described in detail in 20 and utilized by us in the investigation by THG of the ultrafast nonlinear response of SnS 2 and GaN. 21,22 Spectroscopic Characterization. The optical transmission measurements were performed using a Varian Cary 5000 UV−vis− NIR spectrophotometer at room temperature in the 200−2000 nm range.…”

Section: ■ Introductionmentioning

confidence: 99%

LGYSB:Nd─High-Performance Lasing in the Near-Infrared Region

Broasca,

Greculeasa,

Voicu

et al. 2024

J. Am. Chem. Soc.

Self Cite

View full text Add to dashboard Cite

show abstract

“…As carriers, the NLO materials play an important role in achieving OL functionality [ 11 ]. There is a wide range of materials that can be used for optical limiting, such as organic polymers [ 12 ], inorganic metal compounds [ 13 ], and composites [ 14 ]. For several years, researchers have been attempting to explore new NLO materials with larger modulation depths, lower initial limiting thresholds, faster response times, and wider response wavebands.…”

Section: Introductionmentioning

confidence: 99%

Enhancement of Broadband Reverse Saturable Absorption of Red/Black Phosphorus Heterojunction

Wang,

Liu,

et al. 2024

Molecules

View full text Add to dashboard Cite

Although laser technology brings convenience to production and daily life, it also causes high-energy damage. Therefore, there is an urgent need to develop optical limiting materials for laser protection. In this study, a novel nonlinear optical material, red/black phosphorus lateral heterojunction, is successfully prepared through solvothermal and ultrasonic treatment. Using the Z−scan method, the nonlinear optical properties of the red/black phosphorus heterojunction are determined at wavelengths of 532 and 1064 nm. These results indicate that the red/black phosphorus heterojunction exhibits reverse saturable absorption properties in 1.2.3-glycerol. Interestingly, the red/black phosphorus heterojunction shows an enhanced performance over red phosphorus by introducing the black phosphorus phase. Moreover, the red/black phosphorus heterojunction is doped into organically modified silicate gel glass with excellent broadband optical limiting performance. This study highlights the promising prospect of the red/black phosphorus heterojunction in the nonlinear optical and optical limiting fields.

show abstract

“…In this paper, the ultrafast third-order optical nonlinearity of c-plane GaN crystal, excited by ultrashort (fs) high-repetition-rate laser pulses at 1550 nm wavelength, is investigated for the first time by optical THG in non-phase-matching conditions and the corresponding third-order nonlinear optical susceptibility is determined. The very low average power of the third harmonic beam generated in GaN (~pW) is measured by image processing, following a method recently introduced by us for the use of a common camera as an ultrasensitive power-meter [35,36].…”

Section: Introductionmentioning

confidence: 99%

Ultrafast Third-Order Nonlinear Optical Response Excited by fs Laser Pulses at 1550 nm in GaN Crystals

et al. 2021

Self Cite

View full text Add to dashboard Cite

The ultrafast third-order optical nonlinearity of c-plane GaN crystal, excited by ultrashort (fs) high-repetition-rate laser pulses at 1550 nm, wavelength important for optical communications, is investigated for the first time by optical third-harmonic generation in non-phase-matching conditions. As the thermo-optic effect that can arise in the sample by cumulative thermal effects induced by high-repetition-rate laser pulses cannot be responsible for the third-harmonic generation, the ultrafast nonlinear optical effect of solely electronic origin is the only one involved in this process. The third-order nonlinear optical susceptibility of GaN crystal responsible for the third-harmonic generation process, an important indicative parameter for the potential use of this material in ultrafast photonic functionalities, is determined.

show abstract

Ultrafast third-order optical nonlinearity in SnS 2 layered compound for photonic applications

Cited by 10 publications

References 33 publications

LGYSB:Nd─High-Performance Lasing in the Near-Infrared Region

LGYSB:Nd─High-Performance Lasing in the Near-Infrared Region

Enhancement of Broadband Reverse Saturable Absorption of Red/Black Phosphorus Heterojunction

Ultrafast Third-Order Nonlinear Optical Response Excited by fs Laser Pulses at 1550 nm in GaN Crystals

Contact Info

Product

Resources

About