Ultrafast Yb-Doped Fiber Laser Using Few Layers of PdS2 Saturable Absorber

Cheng, Ping; Liu, Shunxiang; Ahmed, Syed M.; Qu, Junle; Qiao, Jian‐Tian; Qiao, Wenchao; Tsang, Yuen Hong

doi:10.3390/nano10122441

Cited by 30 publications

(11 citation statements)

References 40 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Afterwards, in 2015 Wang et al, theoretically reported that 2D PdS 2 is semiconductor with moderate indirect band gap up to ~ 1.60 eV, which is very significant in fabrication of nanodevices 17 . Moreover, Cheng et al, 18 have developed ultrafast Yb doped fiber laser using few layers of PdS 2 and indicated that layered PdS 2 can be a favourable candidate for photonics application. Some work have been reported on the layered PdSe 2 via method of mechanical exfoliated, atomic-resolution scanning transmission electron microscopy (AR-STEM) and chemical vapor deposition (CVD) 14 , 19 – 24 .…”

Section: Introductionmentioning

confidence: 99%

Strain modulating electronic band gaps and SQ efficiencies of semiconductor 2D PdQ2 (Q = S, Se) monolayer

Raval

Gupta

Gajjar

et al. 2022

Sci Rep

View full text Add to dashboard Cite

We studied the physical, electronic transport and optical properties of a unique pentagonal PdQ2 (Q = S, Se) monolayers. The dynamic stability of 2Dwrinkle like-PdQ2 is proven by positive phonon frequencies in the phonon dispersion curve. The optimized structural parameters of wrinkled pentagonal PdQ2 are in good agreement with the available experimental results. The ultimate tensile strength (UTHS) was calculated and found that, penta-PdS2 monolayer can withstand up to 16% (18%) strain along x (y) direction with 3.44 GPa (3.43 GPa). While, penta-PdSe2 monolayer can withstand up to 17% (19%) strain along x (y) dirrection with 3.46 GPa (3.40 GPa). It is found that, the penta-PdQ2 monolayers has the semiconducting behavior with indirect band gap of 0.94 and 1.26 eV for 2D-PdS2 and 2D-PdSe2, respectively. More interestingly, at room temperacture, the hole mobilty (electron mobility) obtained for 2D-PdS2 and PdSe2 are 67.43 (258.06) cm2 V−1 s−1 and 1518.81 (442.49) cm2 V−1 s−1, respectively. In addition, I-V characteristics of PdSe2 monolayer show strong negative differential conductance (NDC) region near the 3.57 V. The Shockly-Queisser (SQ) effeciency prameters of PdQ2 monolayers are also explored and the highest SQ efficeinciy obtained for PdS2 is 33.93% at −5% strain and for PdSe2 is 33.94% at −2% strain. The penta-PdQ2 exhibits high optical absorption intensity in the UV region, up to 4.04 × 105 (for PdS2) and 5.28 × 105 (for PdSe2), which is suitable for applications in optoelectronic devices. Thus, the ultrathin PdQ2 monolayers could be potential material for next-generation solar-cell applications and high performance nanodevices.

show abstract

Section: Introductionmentioning

confidence: 99%

Strain modulating electronic band gaps and SQ efficiencies of semiconductor 2D PdQ2 (Q = S, Se) monolayer

Raval

Gupta

Gajjar

et al. 2022

Sci Rep

View full text Add to dashboard Cite

show abstract

“…Following the demand for stability and robustness in practical applications, real SA choosing is important [40][41][42][43][44]. GaS is an indirect bandgap semiconductor which possesses a crystal lattice with a hexagonal structure, each layer consisting of two Ga and two S closed-packed sublayers in the stacking sequence of S-Ga-Ga-S along the c axis [45][46][47].…”

Section: Introductionmentioning

confidence: 99%

Synthesis of Hexagonal Structured GaS Nanosheets for Robust Femtosecond Pulse Generation

Guo

Liu

et al. 2022

Nanomaterials

View full text Add to dashboard Cite

Gallium sulfide (GaS), with a hexagonal structure, has received extensive attention due to its graphene-like structure and derived optical properties. Here, high-quality GaS was obtained via chemical vapor synthesis and then prepared as a saturable absorber by the stamp-assisted localization-transfer technique onto fiber end face. The stability of the material and the laser damage threshold are maintained due to the optimized thickness and the cavity integration form. The potential of the GaS for nonlinear optics is explored by constructing a GaS-based Erbium-doped mode-locked fiber laser. Stable femtosecond (~448 fs) mode-locking operation of the single pulse train is achieved, and the robust mode-locked operation (>30 days) was recorded. Experimental results show the potential of GaS for multi-functional ultrafast high-power lasers and promote continuous research on graphene-like materials in nonlinear optics and photonics.

show abstract

“…Currently, a lot of 2D materials such as graphene, transition-metal dichalcogenides, − MXene, , and perovskite materials , were employed as SA for the generation of ultrafast laser pulses. However, most of them have achieved either mode-locking − or Q-switching operation. − Only a few SAs are capable of generating mode-locked, Q-switched, and harmonic mode-locked pulses altogether for a specific waveband. − Additionally, most 2D SAs demonstrated pulse laser generation in a single − or two wavelength − regimes. Meanwhile, studies on the SAs generating pulsed laser in three different wavelengths (1, 1.5, and 2 μm), covering the near-infrared to the mid-infrared regime, are still quite inadequate.…”

Section: Introductionmentioning

confidence: 99%

Two-Dimensional Gallium Sulfide as a Novel Saturable Absorber for Broadband Ultrafast Photonics Applications

Ahmed

Qiao

Cheng

et al. 2021

ACS Appl. Mater. Interfaces

Self Cite

View full text Add to dashboard Cite

Two-dimensional (2D) gallium sulfide (GaS) offers a plethora of exceptional electrical and optical properties, allowing it to be used in a wide range of applications, including photodetectors, hydrogen generation, and nonlinear optical devices. In this paper, ultrathin 2D GaS nanosheets are synthesized using the liquid-phase exfoliation method, and the structure, morphology, and chemical composition of the as-prepared nanosheets are extensively investigated. After depositing 2D GaS nanosheets on side polished fibers, successful saturable absorbers (SAs) are fabricated for the first time. The realized modulation depths are 10 and 5.3% at 1 and 1.5 μm, respectively, indicating the wideband saturable absorption performance of the prepared SAs. By integrating GaS-SAs into three different wavelength-based fiber laser cavities, stable mode-locked pulses are achieved, having pulse durations of 46.22 ps (1 μm), 614 fs (1.5 μm), and 1.02 ps (2 μm), respectively. Additionally, different orders of harmonic mode-locked pulses with the highest repetition rate of 0.55 GHz (45th order) and Q-switched pulses with the shortest pulse duration of 2.2 μs are obtained in the telecommunication waveband. These findings suggest that 2D GaS has a lot of potential for broadband ultrafast photonics in nonlinear photonics devices.

show abstract

Ultrafast Yb-Doped Fiber Laser Using Few Layers of PdS2 Saturable Absorber

Cited by 30 publications

References 40 publications

Strain modulating electronic band gaps and SQ efficiencies of semiconductor 2D PdQ2 (Q = S, Se) monolayer

Strain modulating electronic band gaps and SQ efficiencies of semiconductor 2D PdQ2 (Q = S, Se) monolayer

Synthesis of Hexagonal Structured GaS Nanosheets for Robust Femtosecond Pulse Generation

Two-Dimensional Gallium Sulfide as a Novel Saturable Absorber for Broadband Ultrafast Photonics Applications

Contact Info

Product

Resources

About