2011
DOI: 10.1039/c1jm11990g
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Ultrahigh density array of CdSe nanorods for CdSe/polymer hybrid solar cells: enhancement in short-circuit current density

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Cited by 22 publications
(12 citation statements)
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“…The PCE of the cell with a 3D interface was twice as large as that of another solar cell based on a bilayer thin lm from 0.13% to 0.28%. 147 The vertically aligned CdS NRs provide the minimal electron transport path to reduce the charge carrier recombination at the heterojunction interface. The photoactive MEH-PPV layer was prepared by dip-/spin-coating and an optimal PCE of 0.035% was obtained.…”
Section: Ii-vi Semiconductor-based Oih Solar Cellsmentioning
confidence: 99%
“…The PCE of the cell with a 3D interface was twice as large as that of another solar cell based on a bilayer thin lm from 0.13% to 0.28%. 147 The vertically aligned CdS NRs provide the minimal electron transport path to reduce the charge carrier recombination at the heterojunction interface. The photoactive MEH-PPV layer was prepared by dip-/spin-coating and an optimal PCE of 0.035% was obtained.…”
Section: Ii-vi Semiconductor-based Oih Solar Cellsmentioning
confidence: 99%
“…P3HT) or liquid electrolytes. [18][19][20][21] The CdSe nanoparticle size or nanorod length can be controlled to tune the optical response range, and the nanoparticle surface can be functionalized to facilitate electron injection at the interface. 22 Solar cells incorporating CdSe nanostructures have shown significantly improved light absorption and charge transfer processes, with enhanced internal quantum efficiency and solar cell performance.…”
Section: Introductionmentioning
confidence: 99%
“…In a few studies on CdSe nanorod/nanowire arrays, the arrays were synthesized in an alumina template or by electrodeposition and the structure has poor crystallinity, yielding modest cell efficiencies in the range of 0.28% to 3.6%. [18][19][20][21] Although we have seen so many different types of solar cells involving CdSe nanostructures, applying CdSe on fiber substrates to construct FSCs has not been reported.…”
Section: Introductionmentioning
confidence: 99%
“…The low V OC of a device with a higher Cs/Zn molar ratio of 0.121 might be attributed to increased leakage current and density of the trap sites, resulting in trapassisted recombination on the rough ZnO:Cs surface. 24,25 To verify the V OC enhancement of the device using the ZnO:Cs electron transport layer, the surface potential shi of ZnO:Cs lms depending on the Cs-doping concentration was measured by SKPM. As shown in Fig.…”
Section: Resultsmentioning
confidence: 99%