Ultrahigh–energy density lead-free dielectric films via polymorphic nanodomain design

Pan, Hao; Li, Fēi; Liu, Yao; Zhang, Qinghua; Wang, Meng; Lan, Shun; Zheng, Yunpeng; Ma, Jing; Gu, Lin; Shen, Yang; Yu, Pu; Zhang, Shujun; Chen, Lei; Lin, Yuan; Nan, Ce Wen

doi:10.1126/science.aaw8109

Cited by 816 publications

(514 citation statements)

References 49 publications

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“…Rapid growth of renewable offshore wind energy, electrification in land, sea, and air transportations, downhole oil and gas drilling and lifting, outer space explorations, all call for flexible dielectrics with ultrahigh energy and power densities. [ 1–7 ] With the maturing of wide bandgap semiconductors (e.g., SiC, GaN), the electrical and electronic systems could be designed with unprecedentedly high power density and payload efficiency [ 8–10 ] if new flexible dielectric materials could be made available to operate concurrently under high electric fields and elevated temperatures approaching or surpassing 150 °C. [ 2,4,8,11–13 ] However, to date, the search for polymer dielectrics that provide appreciable energy densities at temperatures well above 100 °C has led to only marginal success.…”

Section: Figurementioning

confidence: 99%

“…At temperatures over 100 °C, POFNB exhibits much lower conduction than BOPP and all other high‐temperature polymers. The electrical conduction for POFNB at 150 °C is almost two orders of magnitude lower in a side‐by‐side comparison with the best commercial high‐temperature dielectric polymer films (Figure S27, Supporting Information) and the best reported ceramic films [ 4 ] . The hopping conduction model was utilized to reveal the contribution of large bandgap of POFNB to the suppression on conduction current (Figure S28, Supporting Information).…”

Section: Figurementioning

confidence: 99%

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Flexible Temperature‐Invariant Polymer Dielectrics with Large Bandgap

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operate concurrently under high electric fields and elevated temperatures approaching or surpassing 150 °C. [2,4,8,[11][12][13] However, to date, the search for polymer dielectrics that provide appreciable energy densities at temperatures well above 100 °C has led to only marginal success. High temperature operation under high electric field is challenging for polymer dielectrics. For example, biaxially oriented polypropylene (BOPP), the state-of-the-art commercially available dielectric polymer used for energy storage, has a remarkable breakdown strength of ≈700 MV m −1 and ultralow loss, but can only operate continuously at temperatures up to 85 °C and for a short duration with significant derating at 105 °C. [14,15] Many heat resistant polymers have been designed and studied for high-temperature applications, but they are incapable of operating at an electric field similar to BOPP. [11,16,17] This is because their conjugated aromatic backbones that are able to withstand high temperature, built at the cost of largely reduced bandgaps, lead to high electrical conductivities and poor energy densities especially at elevated temperatures. Recent efforts for enhanced energy storage performance at high temperature via nanocomposites or coating modifications of polymer films, although encouraging, are prohibitively challenging for industrial-scale production due to requirements of (either) materials cost and (or) laborious multi-step synthesis and processing. [2,12,13,18,19] As a result, BOPP is still used today with cumbersome active cooling. The availability of flexible polymer dielectrics, capable of stable operation under ultrahigh electric field and elevated temperature is the limiting factor for high power density electrification and electronics.Due to hot carrier excitation, injection, and transport, assisted under thermal and electric extremes, polymers exhibit a nonlinear increase in electrical conduction, [20][21][22] leading to the reduction of the discharged energy density, largely increased energy loss and ultimately dielectric breakdown failure [23] . While the complexity of these processes makes the study of engineering conduction mechanism under critical electric fields far from fully understood, past studies revealed the dominant role of the bandgap in determining electrical conduction and intrinsic breakdown strength of the polymer dielectrics. [20,[24][25][26][27] However, careful evaluation of common high-temperature polymers reveals, unfortunately, an inverse Flexible dielectrics operable under simultaneous electric and thermal extremes are critical to advanced electronics for ultrahigh densities and/or harsh conditions. However, conventional high-performance polymer dielectrics generally have conjugated aromatic backbones, leading to limited bandgaps and hence high conduction loss and poor energy densities, especially at elevated temperatures. A polyoxafluoronorbornene is reported, which has a key design feature in that it is a polyolefin consisting of repeating units of fairly rigid fused bicycl...

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Section: Figurementioning

confidence: 99%

Section: Figurementioning

confidence: 99%

Flexible Temperature‐Invariant Polymer Dielectrics with Large Bandgap

et al. 2020

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“…A flat spectrum for the dielectric permittivity as a function of temperature is observed from RT to 200°C, which is similar to the weakly coupled relaxor behavior observed for BaTiO 3 -Bi(Me)O 3 materials. 2,14,18 Furthermore, the dielectric loss is no more than 0.3% from 25°C to 200°C, which helps improve the breakdown strength of the films. The origin of relaxor behavior is generally attributed to the presence of nanoscale polar clusters due to the…”

Section: Grain Sizementioning

confidence: 99%

“…Among Pb‐based systems, thin films of lanthanum‐doped lead zirconate titanate (PLZT) have exhibited an extremely high energy density (~25 J/cm 3 ) and efficiency (~70%), combined with stable energy storage properties for up to 200°C . Among Pb‐free relaxor ferroelectric thin films, solid solutions of bismuth‐based compounds such as BaTiO 3 –Bi(Me)O 3 (where Me is a metal cation) and (Bi, Na)TiO 3 have attracted the most attention . Indeed, the energy storage properties of certain Pb‐free relaxor thin films exceed those of Pb‐based relaxor thin films at the ambient temperature .…”

Section: Introductionmentioning

confidence: 99%

High energy storage efficiency and thermal stability of A‐site‐deficient and 110‐textured BaTiO₃–BiScO₃ thin films

Abbas

Pramanick

2020

J Am Ceram Soc

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The development of thin film dielectrics having both high energy density and energy conversion efficiency, as well as good thermal stability, is necessary for practical application in high‐temperature power electronics. In addition, there is a demand for the development of new Pb‐free high‐energy density dielectric materials due to environmental concerns. In this regard, thin films of weakly coupled relaxors based on solid solutions of BaTiO3–BiMeO3 have shown good promise, because they exhibit a remarkably large polarization over a wide temperature range. Nevertheless, the performance of Pb‐free thin films has lagged behind that of their Pb‐based counterparts in terms of thermal stability and energy conversion efficiency. Toward this end, most recent studies on BaTiO3–BiMeO3 systems have focused on the optimization of material composition, while relatively less attention has been paid to other aspects such as defect chemistry and crystallographic texture. In this study, we examine the effects of A‐site vacancy and crystallographic texture on the energy storage performance of BaTiO3–BiScO3 thin films synthesized using pulsed laser deposition (PLD). It is shown that a high energy storage density (Wr) of ~28.8 J/cm3 and a high efficiency of η >90% are achieved through a combination of moderate A‐site vacancy concentration and (110) crystallographic texture. Furthermore, Wr remains nearly temperature independent while a high efficiency of η >80% is maintained for temperatures up to 200°C, which constitutes one of the best performances for Pb‐free ferroelectric films for high‐temperature capacitor applications.

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“…Excellent energy storage performances such as high energy density ( W rec ) and efficiency (η) were found in the samples like 0.4BiFeO 3 ‐0.6SrTiO 3 , 0.25BFO‐0.30BTO‐0.45STO, BaZr 0.15 Ti 0.85 O 3 /BaZr 0.35 Ti 0.65 O 3 , Ba(Zr 0.35 Ti 0.65 )O 3 , Pb 0.8 Ba 0.2 ZrO 3 , and Na 0.5 Bi 0.5 TiO 3 ‐based thin films. [ 18–26 ] Remarkably, with the aid of flexible substrate of mica, Ba(Zr 0.35 Ti 0.65 )O 3 , PLZT and NBT‐based thin films displayed a high degree of flexibility without sacrificing their energy storage performance, [ 23–27 ] suggesting that design and development of flexible inorganic film capacitors is feasible. Among the flexible capacitors, the energy storage performance of NBT‐based film capacitors is more outstanding.…”

Section: Introductionmentioning

confidence: 99%

Flexible Lead‐Free Perovskite Oxide Multilayer Film Capacitor Based on (Na_0.8K_0.2)_0.5Bi_0.5TiO₃/Ba_0.5Sr_0.5(Ti_0.97Mn_0.03)O₃for High‐Performance Dielectric Energy Storage

Yang

Qian

et al. 2020

Advanced Energy Materials

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Flexible thin film dielectric capacitors with high energy storage density and a fast charging–discharging rate have attracted increasing attention as the development of microelectronics progresses toward flexibility and miniaturization. In this work, an all‐inorganic thin film dielectric capacitor with a multilayer structure based on (Na0.8K0.2)0.5Bi0.5TiO3 and Ba0.5Sr0.5(Ti0.97Mn0.03)O3 is designed and synthesized on a mica substrate. By optimizing the periodic number (N), concomitantly enhanced breakdown strength and large polarization difference are achieved in the film with N = 6, which contributes to the large energy density (Wrec) of 91 J cm−3, high efficiency (η) of 68%, and fast discharging rate of 47.6 µs. The obtained energy density is the highest value up to now in flexible dielectric capacitors, including lead‐free and lead‐based inorganic films as well as organic dielectric films. Moreover, no obvious deterioration of the energy storage performance is observed in the wide ranges of working temperature (−50–200 °C), operating frequency (500 Hz to 30 kHz), and fatigue cycles (1–108). Besides, the Wrec and η are ultra‐stable under various bending radii (R = 12–2 mm) and even after 104 bending cycles at R = 4 mm, demonstrating an outstanding mechanical bending endurance. This excellent performance will allow the capacitor thrive in flexible microenergy storage systems.

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Ultrahigh–energy density lead-free dielectric films via polymorphic nanodomain design

Cited by 816 publications

References 49 publications

Flexible Temperature‐Invariant Polymer Dielectrics with Large Bandgap

Flexible Temperature‐Invariant Polymer Dielectrics with Large Bandgap

High energy storage efficiency and thermal stability of A‐site‐deficient and 110‐textured BaTiO₃–BiScO₃ thin films

Flexible Lead‐Free Perovskite Oxide Multilayer Film Capacitor Based on (Na_0.8K_0.2)_0.5Bi_0.5TiO₃/Ba_0.5Sr_0.5(Ti_0.97Mn_0.03)O₃for High‐Performance Dielectric Energy Storage

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Ultrahigh–energy density lead-free dielectric films via polymorphic nanodomain design

Cited by 816 publications

References 49 publications

Flexible Temperature‐Invariant Polymer Dielectrics with Large Bandgap

Flexible Temperature‐Invariant Polymer Dielectrics with Large Bandgap

High energy storage efficiency and thermal stability of A‐site‐deficient and 110‐textured BaTiO3–BiScO3 thin films

Flexible Lead‐Free Perovskite Oxide Multilayer Film Capacitor Based on (Na0.8K0.2)0.5Bi0.5TiO3/Ba0.5Sr0.5(Ti0.97Mn0.03)O3for High‐Performance Dielectric Energy Storage

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Product

Resources

About

High energy storage efficiency and thermal stability of A‐site‐deficient and 110‐textured BaTiO₃–BiScO₃ thin films

Flexible Lead‐Free Perovskite Oxide Multilayer Film Capacitor Based on (Na_0.8K_0.2)_0.5Bi_0.5TiO₃/Ba_0.5Sr_0.5(Ti_0.97Mn_0.03)O₃for High‐Performance Dielectric Energy Storage