Radiation effects can induce severe and diverse soft errors in digital circuits and systems. A Xilinx commercial 16 nm FinFET static random-access memory (SRAM)-based field-programmable gate array (FPGA) was selected to evaluate the radiation sensitivity and promote the space application of FinFET ultra large-scale integrated circuits (ULSI). Picosecond pulsed laser and high energy heavy ions were employed for irradiation. Before the tests, SRAM-based configure RAMs (CRAMs) were initialized and configured. The 100% embedded block RAMs (BRAMs) were utilized based on the Vivado implementation of the compiled hardware description language. No hard error was observed in both the laser and heavy-ion test. The thresholds for laser-induced single event upset (SEU) werẽ 3.5 nJ, and the SEU cross-sections were correlated positively to the laser's energy. Multi-bit upsets were measured in heavy-ion and high-energy laser irradiation. Moreover, latch-up and functional interrupt phenomena were common, especially in the heavy-ion tests. The single event effect results for the 16 nm FinFET process were significant, and some radiation tolerance strategies were required in a radiation environment.of commercial-off-the-shelf (COTS) in the field of integrated circuits (IC) have enabled the use of inexpensive and high-performance electronic components that also contributes to the space industry [9].As reported in Reference [9,10], in CubeSats or many commercial missions, using COTS components is becoming the rule rather than an exception, and many COTS are complicated systems. However, to reduce risks in the radiation environment, identifying the sensitive and the essential modules for a hardening designer is necessary. The Xilinx Ultrascale + FPGA has excellent performance and large storage capacity and it is hugely appealing in data handling. However, the SEU influence and FPGA response are more complicated due to their small feature size, high performance, and special charge collection mechanisms in a radiation environment [3]. Apart from the fault injection in the designing procedure, the irradiation results are more direct and effective to characterize the sensitivity of FPGA. Though several details about alpha particles, neutrons, and protons were reported, the heavy-ion and laser irradiation results are very limited for the CRAM and BRAM module in Ultrascale + FPGA. Moreover, systematic SEE results are essential for the module's potential applications in the radiation environment [11]. Further, FPGA irradiation data will have a guiding significance for logic protections in the design flow and utilization of error mitigation strategies at a system level [1,3].The paper is organized as follows: The device under test (DUT) and testing methods are provided in Section 2. We describe the irradiation parameters and experimental details in Section 3. The heavy-ion and pulse laser irradiation results are presented in Section 4 and further discussion about the application and error mitigation strategies are shown in Section 5. Finally,...