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Matsuda, Yasuhiro H.; Khodaparast, Giti A.; Zudov, M. A.; Kono, Junichiro; Sun, Y.; Kyrychenko, F. V.; Sanders, G. D.; Stanton, C. J.; Miura, N.; Ikeda, Satoru; Hashimoto, Y.; Katsumoto, Shingo; Munekata, H.

doi:10.1103/physrevb.70.195211

Cited by 25 publications

(19 citation statements)

References 39 publications

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“…There have been conflicting reports about the understanding of the VB structure of InMnAs. For example, the cyclotron resonance experiments suggest the VB conduction in InMnAs, 72,73 while infrared optical absorption measurements on InMnAs show the double-exchange-like component, suggesting the IB conduction. 74 Thus, further systematic experiments are needed to investigate the VB structures of (InGaMn)As [75][76][77] and InMnAs.…”

Section: à3mentioning

confidence: 99%

Recent progress in III-V based ferromagnetic semiconductors: Band structure, Fermi level, and tunneling transport

Tanaka

Ohya

Hai

2014

Applied Physics Reviews

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Spin-based electronics or spintronics is an emerging field, in which we try to utilize spin degrees of freedom as well as charge transport in materials and devices. While metal-based spin-devices, such as magnetic-field sensors and magnetoresistive random access memory using giant magnetoresistance and tunneling magnetoresistance, are already put to practical use, semiconductor-based spintronics has greater potential for expansion because of good compatibility with existing semiconductor technology. Many semiconductor-based spintronics devices with useful functionalities have been proposed and explored so far. To realize those devices and functionalities, we definitely need appropriate materials which have both the properties of semiconductors and ferromagnets. Ferromagnetic semiconductors (FMS), which are alloy semiconductors containing magnetic atoms such as Mn and Fe, are one of the most promising classes of materials for this purpose, and thus have been intensively studied for the past two decades. Here, we review the recent progress in the studies of the most prototypical III-V based FMS, p-type (GaMn)As, and its heterostructures with focus on tunneling transport, Fermi level, and bandstructure. Furthermore, we cover the properties of a new n-type FMS, (InFe)As, which shows electron-induced ferromagnetism. These FMS materials having zinc-blende crystal structure show excellent compatibility with well-developed III-V heterostructures and devices.

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Section: à3mentioning

confidence: 99%

Recent progress in III-V based ferromagnetic semiconductors: Band structure, Fermi level, and tunneling transport

Tanaka

Ohya

Hai

2014

Applied Physics Reviews

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“…To further increase Mn doping, a compensation doping might be required. Another advantage of InAs/GaSb QWs is the high sample quality with potentially a large mobil-QAH NI NI ity of 6,000cm 2 /V s for p-type carriers in non-magnetic heterostructures 23 , although it is expected to be somewhat smaller in Mn-doped samples 52 . Due to the strong exchange coupling, the band gap of the QAH state is able to reach 10 meV, far above the Curie temperature of ferromagnetism (around 30 K).…”

mentioning

confidence: 99%

Quantum Anomalous Hall Effect in Magnetically Doped InAs/GaSb Quantum Wells

et al. 2014

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The quantum anomalous Hall effect has recently been observed experimentally in thin films of Cr doped (Bi,Sb)2Te3 at a low temperature (∼ 30mK). In this work, we propose realizing the quantum anomalous Hall effect in more conventional diluted magnetic semiconductors with doped InAs/GaSb type II quantum wells. Based on a four band model, we find an enhancement of the Curie temperature of ferromagnetism due to band edge singularities in the inverted regime of InAs/GaSb quantum wells. Below the Curie temperature, the quantum anomalous Hall effect is confirmed by the direct calculation of Hall conductance. The parameter regime for the quantum anomalous Hall phase is identified based on the eight-band Kane model. The high sample quality and strong exchange coupling make magnetically doped InAs/GaSb quantum wells good candidates for realizing the quantum anomalous Hall insulator at a high temperature.

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“…10,11 While CR has been used to study MBE-grown ferromagnetic InMnAs with a GaSb buffer layer on a GaAs substrate with T c ranging from 30 to 50 K, 12 the CR in the these MBE-grown ferromagnetic structures had features significantly different from the ones reported in this work. Because the InMnAs/GaSb interface is a type-II interface, with electrons and holes confined on opposite sides of the heterojunction, it is possible that in the MBE-grown InMnAs structures, the CR could have originated from or been influenced by carriers at the interface layer between InMnAs and GaSb.…”

Section: Introductionmentioning

confidence: 79%

“…External magnetic fields exceeding 100 T were generated by a single-turn coil technique. 10 The magnetic field was applied along the growth direction and measured by a pickup coil around the sample which was placed inside a continuous-flow helium cryostat. Several IR wavelengths were used as the excitation source and the transmitted signal through the sample was collected using either a fast liquid-nitrogen-cooled HgCdTe detector or a Cu-doped Ge detector.…”

Section: Experimental Cr Measurementsmentioning

confidence: 99%

Cyclotron resonance in ferromagnetic InMnAs and InMnSb

et al. 2013

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We present experimental and theoretical studies of the magneto-optical properties of p-type In 1−x Mn x As and In 1−x Mn x Sb ferromagnetic semiconductor films in ultrahigh magnetic fields oriented along [001]. Samples were fabricated by molecular beam epitaxy (MBE) and metal-organic vapor phase epitaxy (MOVPE). To model the results, we used an 8-band Pidgeon-Brown model generalized to include the wave vector dependence of the electronic states along k z as well as the s-d and p-d exchange interactions with the localized Mn d electrons. The Curie temperature is taken as an input parameter and the average Mn spin is treated in mean-field theory. We compared Landau level and band structure calculations with observed cyclotron resonance (CR) measurements. While differences between the CR measurements are seen for MBE and MOVPE samples, our calculations indicate that they arise from differences in the carrier densities. In addition, the difference in the carrier densities suggests significantly larger average spin for the MOVPE structures; this fact could be responsible for higher Curie temperatures in this material system.

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Ultrahigh-field hole cyclotron resonance absorption inIn1−xMnxAsfilms

Cited by 25 publications

References 39 publications

Recent progress in III-V based ferromagnetic semiconductors: Band structure, Fermi level, and tunneling transport

Recent progress in III-V based ferromagnetic semiconductors: Band structure, Fermi level, and tunneling transport

Quantum Anomalous Hall Effect in Magnetically Doped InAs/GaSb Quantum Wells

Cyclotron resonance in ferromagnetic InMnAs and InMnSb

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