2023
DOI: 10.1016/j.apsusc.2023.156637
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Ultrahigh Incorporation of Tin in SiSn Nanowires Grown via In-Plane Solid-Liquid-Solid Mechanism

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Cited by 2 publications
(2 citation statements)
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“…There is also a two-step anodization process for the fabrication of highly ordered nanoporous anodic aluminum oxide (AAO) templates [78], which is widely used to fabricate 1D and 2D nanostructure materials. An in-plane solid-liquid-solid (IPSLS) growth mode was proposed, where metal droplets are used to absorb amorphous silicon (a-Si:H) thin film and grow in-plane crystalline SiNWs [79][80][81][82]. More importantly, the catalyst droplets can be attracted by simple step edges to guide and grow SiNWs along the edges.…”
Section: Resistive Strain Sensorsmentioning
confidence: 99%
“…There is also a two-step anodization process for the fabrication of highly ordered nanoporous anodic aluminum oxide (AAO) templates [78], which is widely used to fabricate 1D and 2D nanostructure materials. An in-plane solid-liquid-solid (IPSLS) growth mode was proposed, where metal droplets are used to absorb amorphous silicon (a-Si:H) thin film and grow in-plane crystalline SiNWs [79][80][81][82]. More importantly, the catalyst droplets can be attracted by simple step edges to guide and grow SiNWs along the edges.…”
Section: Resistive Strain Sensorsmentioning
confidence: 99%
“…Silicon-tin NWs were also grown by Azrak and coworkers [43] using a procedure called in-plane solid-liquid-solid (IPSLS), which included the use of tin (Sn) as catalyst and the deposition of a-Si:H layers by means of a RF-PECVD reactor. The method presented by the authors involved the evaporation of a thin Sn layer with a thickness of approximately 30 nm, which was then patterned by a lithographic process to form strips of 5 µm lateral dimension and etched by H 2 plasma to remove any oxidation layer and form Sn nanoparticles.…”
Section: Ccp-rf Dischargesmentioning
confidence: 99%