Ultrahigh-mobility graphene devices from chemical vapor deposition on reusable copper

Abstract

A novel dry transfer technique opens the door to large-scale CVD graphene with carrier mobilities of up to several 100,000 cm2 V−1 s−1.

Sensing at the Surface of Graphene Field‐Effect Transistors

“…This extremely high mobility could be ascribed to very clean interfaces above and below graphene and effective screening of all the defects. [17] Very recently, even higher mobilities, up to a staggering 197,600 cm 2 /Vs [52] and 350,000 cm 2 /Vs [61] , have been observed for hBNsandwiched graphene samples. One could also explore various 2D crystals as active sensing elements, MoS 2 or h-BN capped MoS 2 , [53,130] for instance.…”

“…[57] The electronic performances of CVD graphene [58] can be significantly enhanced by growing single-crystal graphene free of grain boundaries [59] and by using a BN substrate similarly to exfoliated graphene, with which mobility up to ~50,000-350,000 cm 2 /Vs can be achieved. [60,61] These mobility numbers are rivaling those of exfoliated samples, making the CVD process ideal for large-area synthesis of high-quality and uniform graphene for sensing applications.…”

“…various inorganic groups, [23][24][25][81][82][83][84][85][86][87][88][89][90] organic or organometallic molecules, [37,[91][92][93][94][95][96] DNAs, [97][98][99][100][101] proteins, [102] peptides, [30,31,103,104] nanoparticles, [105,106,107] and 2D heterostructure. [51,52,61,108] These molecules are able to respond chemically or physically to their nearby environment, whose responses could then be transduced into an appreciable change in the conductivity of the carbon-based honeycomb scaffold. The introduction of such chemical moieties on the graphene surface or edge is often referred to as graphene functionalization.…”

Perfecting the Growth and Transfer of Large Single-Crystal CVD Graphene: A Platform Material for Optoelectronic Applications

“…Aside from microscopy techniques, a quantitative measure of the quality and cleanliness of transferred graphene is the analysis of the 2D peak in the Raman spectrum of graphene [15], [16]. In particular, the width of the 2D peak Γ (2D) is an indicator of strain variations within the laser probe spot, which can also be responsible for charge carrier scattering, and hence is a major limitation of electronic mobility.…”

Progress on Crystal Growth of Two-Dimensional Semiconductors for Optoelectronic Applications

“…Hence, the CVD growth of graphene is often performed on a single-crystalline surface which functions as catalyst. Different metals have been studied for the catalytic growth of graphene including Ni [33], Cu [34][35][36][37], Mo [38], Pt [39], and Ru [40]. Single crystalline graphene with size up to 1 cm can be achieved on Cu substrate [37] and the film with~4 cm in size has been demonstrated on Cu-Ni alloy substrate with optimized conditions [41], as displayed in Figure 2a.…”